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Strong Exciton Polariton Dispersion in Multimode GaN Microcavity

Published online by Cambridge University Press:  31 January 2011

Mei-Chun Liu
Affiliation:
anne06232002@yahoo.com.tw, Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, United States
Yuh-Jen Cheng
Affiliation:
yuhjen_cheng@yahoo.com, Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan, United States
Shih-Hsin Hsu
Affiliation:
shhsu@gate.sinica.edu.tw, United States
Hao-Chung Kuo
Affiliation:
hckuo@faculty.nctu.edu.tw, Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, United States
Tien-Chang Lu
Affiliation:
timtclu@faculty.nctu.edu.tw, Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, United States
Shing-Chung Wang
Affiliation:
scwang@cc.nctu.edu.tw, United States
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Abstract

We report the experimental observation of a very strong cavity polariton dispersion in a multi-axial mode GaN microcavity. The linewidth of photoluminescent (PL) spectrum covers a few cavity axial modes. The resonant photoluminescent peaks have a strong dispersion. The frequency spacing between adjacent peaks decreases by almost a factor of five from 470nm to 370nm. The strong dispersion can be well described by cavity polariton dispersion, but not by the dispersion of the refractive index of GaN. The measured exciton-photon interaction constant is 260 meV. It is an order of magnitude higher than the typically reported values for GaN microcavities

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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