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Stresses in Ion Assisted Deposited Oxide Thih Films

Published online by Cambridge University Press:  22 February 2011

M. Ghanashyam Krishna
Affiliation:
Instrumentation and Services Unit., Indian Institute of Science, Bangalore 560 012, India.
Mansour Al Robaee
Affiliation:
Instrumentation and Services Unit., Indian Institute of Science, Bangalore 560 012, India.
S. Kanakaraju
Affiliation:
Instrumentation and Services Unit., Indian Institute of Science, Bangalore 560 012, India.
K. Narasimha Rao
Affiliation:
Instrumentation and Services Unit., Indian Institute of Science, Bangalore 560 012, India.
S. Mohan
Affiliation:
Instrumentation and Services Unit., Indian Institute of Science, Bangalore 560 012, India.
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Abstract

Thin films of Ceria, Titania and Ziroonia have been prepared using Ion Assisted Deposition(IAD). The energy of ions was varied between 0 and 1 keV and current densities up to 220 μA/cm were used. It was found that the stress behaviour is dependent on ion species, i.e. Argon or Oxygen, ion energy and current density and substrate temperature apart from the material. While oeria files showed tensile stresses under the influence of argon ion bombardment at ambient temperature, they showed a sharp transition from tensile to compressive stress with increase in substrate temperature. When bombarded with oxygen ions they showed a transition from tensile to compressive stress with increase in energy. The titania films deposited with oxygen ions, on the other hand showed purely tensile stresses. Zirconia films deposited with oxygen ions, however, showed a transition from tensile to compressive stress.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

1 Roy, R. A. and Yee, D. S., in Handbook of Ion beam processing technology edited by. Cuomo, J.J. Rossnagel, S.M. and Kaufman, H.R., (Noyes , NJ., USA), 194, 1989.Google Scholar
2 Ghanashyan Krishna, M., Kanakaraju, S., Narasimha Rao, K. and Mohan, S., Mat.Sci.Eng.B, 21, 10 (1993).CrossRefGoogle Scholar
3 Ghanashyam Krishna, M., Kanakaraju, S., and Mohan, S., Vacuum (in press).Google Scholar
4 Al-Robaee, M.S., Ghanashyam Krishna, M., Narasinha Rao, K. and Mohan, S., J.Vac.Sci.Technol.A, 9, 3048 (1991).CrossRefGoogle Scholar
5 Martin, P.J. and Hetterfield, R.P., in Handbook of Ion beam processing technology edited by Cuono, J.J. Rossnagel, S.M. and Kaufman, H.R., (Hoyes , NJ., USA), 342, 1989.Google Scholar
6 Hindischmann, H., J.Vac.Sci.Technol.A, 9, 2431 (1991).CrossRefGoogle Scholar

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