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Stress engineering using AlN/GaN superlattices for epitaxy of GaN on 200 mm Si wafers

Published online by Cambridge University Press:  18 December 2014

Jie Su
Affiliation:
Veeco MOCVD Operations, 394 Elizabeth Avenue, Somerset, NJ 08873, USA
Eric A. Armour
Affiliation:
Veeco MOCVD Operations, 394 Elizabeth Avenue, Somerset, NJ 08873, USA
Balakrishnan Krishnan
Affiliation:
Veeco MOCVD Operations, 394 Elizabeth Avenue, Somerset, NJ 08873, USA
Soo Min Lee
Affiliation:
Veeco MOCVD Operations, 394 Elizabeth Avenue, Somerset, NJ 08873, USA
George D. Papasouliotis
Affiliation:
Veeco MOCVD Operations, 394 Elizabeth Avenue, Somerset, NJ 08873, USA
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Abstract

Stress control using AlN/GaN superlattices (SLs) for epitaxy of GaN on 200 mm Si (111) substrates is reported. Crack-free 2 μm GaN layers were grown over structures containing 50 to 100 pairs of 3-5 nm AlN/10-30 nm GaN SLs. Compressive and tensile stress can be precisely adjusted by changing the thickness of the AlN and GaN layers in the SLs. For a constant period thickness, the effects of growth conditions, such as growth rate of GaN, V/III ratio during AlN growth, and growth temperature, on wafer stress were investigated.

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Articles
Copyright
Copyright © Materials Research Society 2014 

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Stress engineering using AlN/GaN superlattices for epitaxy of GaN on 200 mm Si wafers
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