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Strain-Relieved Reliable Lasers Grown on Si By MOCVD

Published online by Cambridge University Press:  25 February 2011

Takashi Egawa
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Yoshiaki Hasegawa
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Takashi Jimbo
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Masayoshi Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
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Abstract

Conventional GaAs-based laser diodes grown on Si substrates suffer from rapid degradation, which results from the deteriorations of optical and electrical characteristics. Electroluminescence observation shows that the optical deterioration is caused by the formation of dark-line defects. The current-voltage (I-V) characteristic of the p-n junction is degraded with aging, and results in an ohmic-like under a higher ambient temperature and a larger forward current. The deterioration of the I-V characteristic is caused by defect-accelerated impurity diffusion because the growth of GaAs on Si substrates (GaAs/Si) involves the high dislocation density, the large tensile stress and the large amount of Si near the GaAs/Si interface. A significant improvement in reliability has been achieved in the strain-relieved AlGaAs/InGaAs laser diode on Si grown with the InGaAs intermediate layer. The stress relief by the InGaAs active layer and the reduction of the dark-line defect formation by the InGaAs intermediate layer are required to fabricate reliable GaAs-based laser diodes on Si substrates.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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