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Stimulated Emission from Single- and Multiple-Quantum-Well GaN-AlGaN Separate-Confinement Heterostructures

Published online by Cambridge University Press:  10 February 2011

D. A. S. Loeber
Affiliation:
Department of Electrical and Computer Engineering, University of Massachusetts at Amherst, Amherst, MA 01003
N. G. Anderson
Affiliation:
Department of Electrical and Computer Engineering, University of Massachusetts at Amherst, Amherst, MA 01003
J. M. Redwing
Affiliation:
Epitronics, 7 Commerce Drive, Danbury, CT 06810
J. S. Flynn
Affiliation:
Epitronics, 7 Commerce Drive, Danbury, CT 06810
G. M. Smith
Affiliation:
Epitronics, 7 Commerce Drive, Danbury, CT 06810
M. A. Tischler
Affiliation:
Epitronics, 7 Commerce Drive, Danbury, CT 06810
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Abstract

Stimulated emission characteristics are examined for GaN-AlGaN separate-confinement quantum-well heterostructures grown by MOVPE on 4H-SiC substrates. We specifically focus on comparison of structures with different quantum well active region designs. Polarization resolved edge emission spectra and stimulated emission thresholds are obtained under optical pumping using a stripe excitation geometry. Stimulated emission characteristics are studied as a function of the number of quantum wells in the structure, and are correlated with surface photoluminescence properties. We find reduced stimulated emission thresholds and increased surface photoluminescence intensities as the number of quantum wells is reduced, with the best results obtained for a single-quantum-well structure. These results should provide useful information for the design of GaN-based quantum well lasers.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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Stimulated Emission from Single- and Multiple-Quantum-Well GaN-AlGaN Separate-Confinement Heterostructures
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Stimulated Emission from Single- and Multiple-Quantum-Well GaN-AlGaN Separate-Confinement Heterostructures
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