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The Staebler-Wronski Effect and the Thermal Equilibration of Defect and Carrier Concentrations

Published online by Cambridge University Press:  16 February 2011

R.M.A. Dawson
Affiliation:
The Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
C.M. Fortmann
Affiliation:
The Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
Y.M. Li
Affiliation:
The Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
C.R. Wronski
Affiliation:
The Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
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Abstract

Light induced degradation of intrinsic Amorphous silicon (a-Si:H) is investigated as a function of temperature. Previous work described an equilibrium framework for the high temperature behavior of dangling bonds defects (DB) 11]; and the temperature dependence of the annealed state photo, σPH, and dark, σD, conductivities of a series of intrinsic a-Si:H Materials deposited over a range of substrate temperatures, 200°C < Ts < 380°C [2]. These results are extended to the light degraded state where elevated temperatures provide for equilibration of the free carrier and DB concentrations. For the equilibrium, light degraded state, both σD and σPH, decrease compared to the annealed state while the ratio, σDPH remains unchanged. Relationships between the ratio [DB+]/[DB] and the Fermi level are derived from the equilibrium framework.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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