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Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures

Published online by Cambridge University Press:  25 May 2012

Siddarth G. Sundaresan
Affiliation:
GeneSiC Semiconductor Inc, 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, U.S.A.
Aye-Mya Soe
Affiliation:
GeneSiC Semiconductor Inc, 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, U.S.A.
Ranbir Singh
Affiliation:
GeneSiC Semiconductor Inc, 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, U.S.A.
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Abstract

The reliability of the electrical characteristics of SiC “Super” Junction Transistors (SJTs) is investigated under long-term avalanche-mode, DC and pulsed-current operation. There is absolutely no change in the blocking I-V characteristics after a 934 hour repetitive avalanche stress test. Long-term operation of the Gate-Source diode (open-Drain mode) alone does not result in any degradation of the on-state voltage drop (VF) or current gain (β). Long-term operation in common-Source mode results in negligible VF or β degradation, if the base-plate is maintained at 25 °C. A greater degradation of β results with increasing base-plate temperature. The same total electrical charge, if passed through the SJT as a pulsed current instead of a DC current results in a smaller β reduction. It is also shown that this β degradation can be reversed by annealing at ≥ 200 °C, suggesting the possibility of degradation-free operation of SiC SJTs, when operating in pulsed current mode at ≥ 200 °C temperatures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2012

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References

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Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures
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