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Spin Relaxation in SiGe Islands

Published online by Cambridge University Press:  01 February 2011

Hans Malissa
Affiliation:
hans.malissa@jku.at, Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Altenbergerstr. 69, Linz, 4040, Austria
Wolfgang Jantsch
Affiliation:
wolfgang.jantsch@jku.at, Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Altenbergerstr. 69, Linz, 4040, Austria
Gang Chen
Affiliation:
gang.chen@jku.at, Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Altenbergerstr. 69, Linz, 4040, Austria
Herbert Lichtenberger
Affiliation:
herbert.lichtenberger@jku.at, Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Altenbergerstr. 69, Linz, 4040, Austria
Thomas Fromherz
Affiliation:
thomas.fromherz@jku.at, Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Altenbergerstr. 69, Linz, 4040, Austria
Friedrich Schäffler
Affiliation:
friedrich.schaffler@jku.at, Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Altenbergerstr. 69, Linz, 4040, Austria
Günther Bauer
Affiliation:
guenther.bauer@jku.at, Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Altenbergerstr. 69, Linz, 4040, Austria
Alexei Tyryshkin
Affiliation:
atyryshk@Princeton.EDU, Princeton University, Department of Electrical Engineering, Princeton, NJ, 08544, United States
Stephen Lyon
Affiliation:
lyon@Princeton.EDU, Princeton University, Department of Electrical Engineering, Princeton, NJ, 08544, United States
Zbyslaw Wilamowski
Affiliation:
wilamz@ifpan.edu.pl, Institute of Physics, Polish Academy of Sciences, Warsaw, N/A, Poland
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Abstract

We present our work on the spin relaxation of electrons confined in SiGe islands. Ge islands are grown on unstructured and structured Si(100) substrates by MBE, and lead to strain in the Si layer that is deposited on top. These quantum dot structures are investigated by photoluminescence and electron spin resonance (ESR) experiments, the latter both in continuous wave and pulsed mode. We observe a g-factor and an ESR line width that correspond to Si conduction band electrons with additional inhomogeneous broadening.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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