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SPFM Pre-Cleaning for formation of Silicon Interfaces by Wafer Bonding

Published online by Cambridge University Press:  10 February 2011

Stefan Bengtsson  and
Karin Ljungberg
Stefan Bengtsson
Affiliation:
Solid State Electronics, Chalmers University of Technology, S-412 96 Göteborg, Sweden, stefan@ic.chalmers.se
Karin Ljungberg
Affiliation:
Mikroelektronik Centret, Technical University of Denmark, Bldg. 345e, DK-2800 Lyngby, Denmark
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Abstract

The use of H2SO4:H2O2:HF (SPFM) at low HF concentrations (10 to 1000 ppm) has been investigated as the preparation procedure prior to formation of Si/Si interfaces by wafer bonding. The SPFM cleaning process makes it possible to form a hydrophilic (OH terminated) silicon surface, thereby achieving a spontaneous and strong room temperature bond. Electrical characterization using current vs voltage and spreading resistance measurements shows that this cleaning procedure can be used to form Si/Si junctions with excellent electrical properties. Some of the problems related to hydrophobic wafer bonding can thus be circumvented by the proposed technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 267
Copyright
Copyright © Materials Research Society 1997

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References

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