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Spectroscopic Investigation of Arsenic-Induced Surface Defects in High-Dose As+ Implanted Rapid Thermal Annealed Silicon

Published online by Cambridge University Press:  28 February 2011

S.N. Kumar
Affiliation:
Laboratoire de Physique de la Matière, U.A. CNRS N° 358 Institut National des Sciences Appliqudes de Lyon 20 Av. A Einstein, F-69621 Villeurbanne Cedex, France
G. Chaussemy
Affiliation:
Laboratoire de Physique de la Matière, U.A. CNRS N° 358 Institut National des Sciences Appliqudes de Lyon 20 Av. A Einstein, F-69621 Villeurbanne Cedex, France
P. Roura
Affiliation:
Laboratoire de Physique de la Matière, U.A. CNRS N° 358 Institut National des Sciences Appliqudes de Lyon 20 Av. A Einstein, F-69621 Villeurbanne Cedex, France
A. Laugier
Affiliation:
Laboratoire de Physique de la Matière, U.A. CNRS N° 358 Institut National des Sciences Appliqudes de Lyon 20 Av. A Einstein, F-69621 Villeurbanne Cedex, France
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Abstract

Techniques of low-temperature photoluminescence, Auger electron spectroscopy, and X-ray photoelectron spectroscopy are used to study the residual defects remaining after the rapid thermal annealing of ion-implantation induced damage in As+ implanted (100) silicon. Rapid thermal annealing resulted in the electrical activation of a major portion of arsenic in the implanted zone, but a shallow region confined within a depth of =200 Å from the surface contained As complexed with Si and O atoms. Surface characterization results agree with the observed degradation in transport properties of the diodes constructed on the shallow N+/P As+ implanted B doped p-Si wafers.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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Spectroscopic Investigation of Arsenic-Induced Surface Defects in High-Dose As+ Implanted Rapid Thermal Annealed Silicon
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