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Spectroscopic Ellipsometry Study of HgCdTe Epilayer Surfaces During Electron Cyclotron Resonance Plasma Etching

Published online by Cambridge University Press:  10 February 2011

J. N. Johnson
Affiliation:
E-OIR Measurements, Inc., Spotsylvania, VA 22553, jjohnson@nvl.army.mil
J. H. Dinan
Affiliation:
Night Vision and Electronic Sensors Directorate, Ft. Belvoir, VA 22060
K. M. Singley
Affiliation:
Night Vision and Electronic Sensors Directorate, Ft. Belvoir, VA 22060
M. Martinka
Affiliation:
Night Vision and Electronic Sensors Directorate, Ft. Belvoir, VA 22060
B. Johs
Affiliation:
J. A. Woollam Co., Inc., Lincoln, NE 68508
Corresponding
E-mail address:
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Abstract

Spectroscopie ellipsometry has been used to monitor optical characteristics of HgCdTe surfaces during plasma etching in an electron cyclotron resonance reactor. Commonly used process conditions were found to induce changes in the ellipsometric parameters Δ and φ. A model was constructed to account for these changes in terms of process-induced roughness and mercury depleted sub-surface layers An independent characterization of the near-surface region was earned out ex situ after etching using Auger spectroscopy and x-ray photoelectron spectroscopy. Plasma process parameters were varied to isolate their influence on surface conditions and a set of parameters is given for which changes are minimized.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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Spectroscopic Ellipsometry Study of HgCdTe Epilayer Surfaces During Electron Cyclotron Resonance Plasma Etching
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