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Solution Processed Resistive Random Access Memory Devices for Transparent Solid-State Circuit Systems

Published online by Cambridge University Press:  27 February 2014

Yiran Wang
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Bing Chen
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Dong Liu*
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Bin Gao
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Lifeng Liu*
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Xiaoyan Liu*
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Jinfeng Kang*
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
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Abstract

A solution-processed method is developed to fabricate fully transparent resistive random access memory (RRAM) devices with a configuration of FTO/ZrO2/ITO, where the zirconium dioxide (ZrO2) layer was firstly deposited on fluorine tin oxide (FTO) substrate by sol-gel and then indium tin oxide (ITO) films were deposited on ZrO2 layer by sol-gel as the top electrodes.The solution processed FTO/ZrO2/ITO based RRAM devices show the fully transparency and excellent bipolar resistance switching behaviors. The resistance ratio between high and low resistance states was more than 10, and more than 100 switching cycles and good data retention and multilevel resistive switching have been demonstrated.

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Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Wager, J. F., Science, Vol. 300 No.5623, p. 1245, (May 2003).CrossRef
Yao, J., Lin, J., Dai, Y.H., Ruan, G.D., Yan, Z., Li, L., Zhong, L., Natelson, D., Tour, J.M., Nature Communications ,Vol. 3, No.1101, (Oct 2012).
Seo, J. W., Park, J. W., Lim, K. S., Yang, J. H., & Kang, S. J., Applied Physics Letters, 93(22), 223505–223505, (2008).CrossRef
Kim, A., Song, K., Kim, Y., & Moon, J. ,ACS applied materials & interfaces, 3(11), 45254530, (2011).CrossRef
Bing, S., Li-Feng, L., De-Dong, H., Yi, W., Xiao-Yan, L., Ru-Qi, H., & Jin-Feng, K., Chinese Physics Letters, 25(6), 2187, (2008).CrossRef
Wu, Jeffrey Chi-Sheng, and Li-Chuen, Cheng., Journal of Membrane Science,167.2: 253261, (2000).CrossRef
Su, C., Sheu, T. K., Chang, Y. T., Wan, M. A., Feng, M. C., & Hung, W. C., Synthetic Metals, 153(1-3), 912, (2005).CrossRef
Zhang, H., Gao, B., Sun, B., Chen, G., Zeng, L., Liu, L.,Liu, X., Lu, J., Han, R., Kang, J., Yu, B., Applied Physics Letters, 96(12), 123502–123502, (2010).CrossRef
Wang, S. Y., Huang, C. W., Lee, D. Y., Tseng, T. Y., & Chang, T. C., Journal of Applied Physics, 108, 114110, (2010).CrossRef

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