Hostname: page-component-7bb8b95d7b-cx56b Total loading time: 0 Render date: 2024-09-30T01:04:12.956Z Has data issue: false hasContentIssue false
  • English
  • Français

Solution Grown Polysilicon for Flat Panel Displays

Published online by Cambridge University Press:  10 February 2011

R. L. Wallace  and
W. A. Anderson
R. L. Wallace
Affiliation:
State University of New York at Buffalo, Center For Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, 217C Bonner Hall, Amherst, NY 14260
W. A. Anderson
Affiliation:
State University of New York at Buffalo, Center For Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, 217C Bonner Hall, Amherst, NY 14260
Get access

Abstract

Thin-film poly-Si on low-cost substrates is useful for thin-film transistors in flat panel displays or for photovoltaics. The films reported herein were formed at 600°C by d.c. magnetron sputtering from a Si-target onto a SiO2/Mo substrate, pre-coated with Sn or In/Ti to give a liquid phase growth. Poly-Si films have given a preferred (111) orientation, grain size up to 20μm, a carrier mobility exceeding 100cm2/Vs and carrier lifetime of 8μs when using the Sn pre-layer. The Sn pre-layer typically gave smaller grain size than did the In/Ti solvent but the latter gave lower carrier lifetime from Ti incorporation in the film. The film from the Sn pre-layer gave carrier mobility of 140cm2/V-s after hydrogenation by microwave electron cyclotron resonance. Properties of the Si thin-film can be controlled by type of pre-layer, doping of the target, substrate temperature and deposition environment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 219
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Yang, Y. H. and Abelson, J.R., Appl.Phys. Lett.,67, 3623 (1995).Google Scholar
2. Heath, J. R., Gates, S. M. and Chess, C. A., Appl. Phys. Lett.,3569 (1994).Google Scholar
3. Czubatyz, W., Beglau, D., Himmler, R., Wicker, G., Jablonski, D. and Guha, S., IEEE Elec. Dev. Lett., 10, 349 (1989).Google Scholar
4. He, D., Okada, N., Fortmann, C. M., and Shimizu, I., J. Appl. Phys., 76, 4728 (1994).Google Scholar
5. Finger, F., Hapke, P., Luysberg, M., Carius, R., Wagner, H. and Scheib, M., Appl. Phys. Lett., 65, 2588 (1994).Google Scholar
6. Hasegawa, S., Watanabe, S., Inokuma, T. and Kurata, Y., J. Appl. Phys., 77, 1938 (1995).Google Scholar
7. Sarret, M., Liba, A., Le Bihan, F., Joubert, P. and Fortin, B., J. Appl. Phys., 76, 5492 (1994).Google Scholar
8. Girault, B., Chevrier, F., Joullie, A. and Bougnot, G., J. Cryst. Growth, 37, 169 (1977).Google Scholar
9. Lee, S. and Green, M., J. Elec. Mtls., 20, 635 (1991).Google Scholar
10. Barnett, A., Hall, R., Fardig, D. and Culik, J., Proc 18th IEEE Photovoltaic Specialists Conf., IEEE Piscataway, 1094 (1985).Google Scholar
11. Wallace, R. L. and Anderson, W. A.,First World Conference on Photovoltaic Energy Conversion, Hawaii, Dec. 5–9, 1994.Google Scholar
12. Wallace, R. L. and Anderson, W. A., Materials Research Society Meeting, Boston, Nov. 28-Dec.2, 1994.Google Scholar
13. Taniguchi, M., Hirose, M., Osaka, Y., Hasegawa, S., Jap. J. Appl. Phys., 19, 4 (1991).Google Scholar