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Solid-State Reactions of a 3D-Transition Metal-Ti/Al2O3 System

Published online by Cambridge University Press:  21 February 2011

Seiichi Suenaga
Affiliation:
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, Kawasaki 210, Japan
Miho Koyama
Affiliation:
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, Kawasaki 210, Japan
Shinji Arai
Affiliation:
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, Kawasaki 210, Japan
Masako Nakahashi
Affiliation:
Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, Kawasaki 210, Japan
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Abstract

An interfacial mechanism for reactions between a Me-Ti thin film (Me=3d transition metals; Cu,Ni) and an A12O3 substrate is newly proposed. It has been clarified that Me3Ti3O (diamond cubic of Fd3m), which is formed as an intermediate phase in both the Cu-Ti/Al2O3 and Ni-Ti/Al2O3 systems, is responsible for the bonding between Me and A12O3. The solid-state reactions of the Me-Ti bilayer film/Al2O3 system were studied with Auger electron spectroscopy (AES) and X-ray diffraction (XRD) to clarify the interfacial reaction between Me-Ti and the A12O3 substrate. Me3Ti3O was observed at the interface between A12O3 and Me after annealing. Me3Ti3O was formed by oxidation of the Me-Ti compounds. The oxygen which reacted with the Me-Ti compounds has been found to be generated from the reduction of the A12O3 substrate.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

1 Suenaga, S., Koyama, M., Arai, S., and Nakahashi, M., J.Mater.Res. 8, 1805(1993).CrossRefGoogle Scholar
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