Skip to main content Accessibility help
×
Home
Hostname: page-component-99c86f546-zzcdp Total loading time: 0.191 Render date: 2021-12-05T20:20:52.180Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Solid Phase Epitaxy of Implanted Silicon by Electron Irradiation at Room Temperature

Published online by Cambridge University Press:  26 February 2011

G. Lulli
Affiliation:
CNR - Istituto LAMEL, Via dé Castagnoli n.1 - 40126 Bologna, Italy
P. G. Merli
Affiliation:
CNR - Istituto LAMEL, Via dé Castagnoli n.1 - 40126 Bologna, Italy
M. Vittori Antisari
Affiliation:
ENEA - Divisone Scienza dei Materiali, CRE Casaccia, CP 2400 00100 Roma, Italy
Get access

Abstract

Solid-phase epitaxy of implanted Si is observed at room temperature during in situ electron irradiation in a Transmission Electron Microscope. Results obtained from irradiation of cross sections of samples containing different doping species show that: i) the basic mechanism of the process is the migration and recombination at the amorphous-crystalline interface of radiation defects coming both from the amorphous and crystalline side; ii) the diffusion length of such defects is of the order of 40 nm; iii) the regrowth rate is impurity dependent: a factor two exists between the faste

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Gerasimenko, N.N., Dvurechenskii, A.V., Kachurin, G.A., Pridachin, N.B. and Smirnov, L.S., Sov.Phys.-Semicond. 6, 1588 (1973)Google Scholar
2 Linnros, J., Svensson, B. and Holm~n, G., Phys.Rev.B 30, 3629 (1984)CrossRefGoogle Scholar
3 Elliman, R.G., Johnson, S.T., Pogany, A.P. and Williams, J.S., Nucl.lnstrum. Method B 7/8, 310 (1985).CrossRefGoogle Scholar
4 Cembali, G.F., Merli, P.G. and Zignani, F., Appl.Phys.Lett. 38, 808 (1981)CrossRefGoogle Scholar
5 Berti, M., Drigo, A.V., Lulli, G., Merli, P.G. and Antisari, N.Vittori, phys. stat.sol.(a) 94, 85 (1986)Google Scholar
6 Berti, M., -Drigo, A.V., Lulli, G., Merli, P.G. and Antisari, M.Vittori, phys. stat.sol.(a) 97, 77 (1986)CrossRefGoogle Scholar
7 Linnros, J. and Holmèn, G., J.Appl.Phys. 59, 1513 (1986)CrossRefGoogle Scholar
8 Williams, J.S., Elliman, R.G., Brown, W.L. and Seidel, T.E., Phys.Rev.Lett. 55, 1482 (1985)CrossRefGoogle Scholar
9 Lulli, G., Merli, P.G. and Antisari, M.Vittori, Phys.Rev.B., (1987) in pressGoogle Scholar
10 Kendall, D.L. and DeVries, D.B. in “Semiconductor Silicon 1969” ed. by Haberecht, R.R. and Kern, E.L. (Electrochemical Society, New York 1970), p.358 Google Scholar
11 Watkins, G.D., J.Phys.Soc.Japan 18, 22 (1963)Google Scholar
12 Csepregi, L., Kennedy, E.F., Gallagher, T.J. and Mayer, J.W., J.Appl.Phys. 48, 4234 (1977)CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Solid Phase Epitaxy of Implanted Silicon by Electron Irradiation at Room Temperature
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Solid Phase Epitaxy of Implanted Silicon by Electron Irradiation at Room Temperature
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Solid Phase Epitaxy of Implanted Silicon by Electron Irradiation at Room Temperature
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *