Skip to main content Accessibility help
×
Home
Hostname: page-component-99c86f546-66nw2 Total loading time: 0.44 Render date: 2021-12-09T13:56:08.746Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Single Wafer Amorphous Silicon Process Evaluation

Published online by Cambridge University Press:  15 February 2011

David O'Meara
Affiliation:
APRDL Motorola, 3501 Ed Bluestein Blvd., Austin, Tx. 78721
Chow Ling Chang
Affiliation:
Applied Materials, 9050 Capital of Texas Highway, Austin, Tx, 78759
Roc Blumenthal
Affiliation:
APRDL Motorola, 3501 Ed Bluestein Blvd., Austin, Tx. 78721
Rama I. Hegde
Affiliation:
APRDL Motorola, 3501 Ed Bluestein Blvd., Austin, Tx. 78721
Lata Prabhu
Affiliation:
APRDL Motorola, 3501 Ed Bluestein Blvd., Austin, Tx. 78721
Vidya Kaushik
Affiliation:
APRDL Motorola, 3501 Ed Bluestein Blvd., Austin, Tx. 78721
Get access

Abstract

Single wafer amorphous silicon deposition was characterized through process modeling and film characterization for application in semiconductor production. DOE methodology was used to determine the main deposition parameters, and the responses were limited to device production requirement properties of surface roughness, deposition rate and degree of crystallinity of the as-deposited film. The data trends and models show that deposition temperature and silane flow are the main factors. Increasing either or both factor increases the deposition rate and the surface roughness. The surface morphology, evaluated by AFM, SEM and TEM, was found to be rougher at extreme growth conditions than the poly crystalline film formed after anneal. The as-deposited surface morphology was not a result of pre-anneal crystal formations as determined by TEM cross sections of samples before and after anneal. Lack of crystalinity is important for impurity diffusion considerations. Device application of the single wafer a-Si process will be a compromise between growth rate (and associated throughput) and surface roughness that can be tolerated.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1) Mieno, F., Sukegawa, T.S., Lizuka, J., Miyata, H., Nomura, H., Tsukune, A., and Furumura, Y., J. Electrochem. Soc., vol. 141 No. 8, 2166 (8/94).CrossRefGoogle Scholar
2) Paulson, W.M., Hegde, R.I., Doris, B.B., Kaushik, V., Tobin, P.J., Fitch, J., McGahan, W.A. and Woollam, J.A., Mat. Res. Soc. Symp. Proc. Vol. 355, 77 (1995).CrossRefGoogle Scholar
3) Hegde, R.I., Paulson, W.M., Tobin, P.J., J. Vac. Sci., Technol. B, 13 (4)(Jul/Aug 1995)CrossRefGoogle Scholar
4) Hegde, R.I., Chonko, M.A., and Tobin, P.J., Mat. Res. Soc. Symp. Proc. Vol. 295, 65 (1993)CrossRefGoogle Scholar
5) Fitch, J.T., Hegde, R.I., Beinglass, I., and Venkatesan, M., Mat. Res. Soc. Symp. Proc. Vol. 355, 89 (1995).CrossRefGoogle Scholar
6) Paulson, W.M., Breaux, L.H., Hegde, R.I., and Tobin, P.J., Mat. Res. Symp. Proc. Vol. 324, 397 (1994).CrossRefGoogle Scholar
7) Ino, M., Miyano, J., Kurogi, H., Tamura, H., Nagatomo, Y., and Yoshimaru, M., Vac, J.. Sci. Technol. B, 14 (2),(Mar/Apr 1996 Google Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Single Wafer Amorphous Silicon Process Evaluation
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Single Wafer Amorphous Silicon Process Evaluation
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Single Wafer Amorphous Silicon Process Evaluation
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *