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Simulation of Collimated Titanium Nitride Physical Vapor Deposition using EVOLVE

Published online by Cambridge University Press:  25 February 2011

Anthony J. Toprac
Affiliation:
SEMATECH, 2706 Montopolis, Austin, TX 78741-6499
Shi-Qing Wang
Affiliation:
SEMATECH, 2706 Montopolis, Austin, TX 78741-6499 Also with Fairchild Research Center, NSC
Jim Schlueter
Affiliation:
SEMATECH, 2706 Montopolis, Austin, TX 78741-6499
Timothy S. Cale
Affiliation:
Arizona State University, Tempe, AZ 85287-6006
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Abstract

Simulation of the physical vapor deposition (PVD) of titanium nitride (TiN) in micronscale contacts was performed using EVOLVE, a physically-based model of non-continuum mass transport. Simulations of uncollimated TiN PVD using a sub-unity sticking coefficient of 0.6 provide accurate model predictions of experimental data. Using this value in simulations of PVD with a 1:1 aspect ratio collimator results in a significant underprediction of titanium nitride deposition in the feature bottom in comparison to the experimental results. This under-prediction was compensated for empirically by adjusting a “beaming” coefficient to produce good model predictions of the experimental data.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

1 Cale, T.S.. Flux distributions in low pressure deposition and etch models. J. Vac. Sci. Technol. B, 9(5):2551, 1991.CrossRefGoogle Scholar
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3 Cale, T.S. and Raupp, G.B.. A unified line-of-sight model of deposition in rectangular trenches. J. Vac. Sci. Technol. B, 8(6): 1242, 1990.CrossRefGoogle Scholar
4 Joshi, R.V. and Brodsky, S., in Proceedings of the Ninth International VLSI Multilevel Interconnection Conference (VMIC), Santa Clara, CA, 1992, page 253.Google Scholar
5 Rogers, B.R., in Cale, T.S. and Pintchovski, F.S., editors, Advanced Metallization for ULSI Applications 1992, volume V8, Mat. Res. Soc., Pittsburgh, PA, 1993, pages 341344.Google Scholar
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