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Silicon Nanowire Electromechanical Switch for Logic Device Application

Published online by Cambridge University Press:  01 February 2011

Qiliang Li
Affiliation:
Qiliang.Li@nist.gov, National Institute of Standards and Technology, Semiconductor Electronic Division, 100 Bureau Dr., Gaithersburg, MD, 20899, United States, 1-301-975-3241
Sang-Mo Koo
Affiliation:
SangMo.Koo@nist.gov, Kwangwoon University, Seoul, 139-701, Korea, Republic of
Monica D. Edelstein
Affiliation:
Monica.Edelstein@nist.gov, National Institute of Standards and Technology, Gaithersburg, MD, 20899, United States
John S. Suehle
Affiliation:
John.Suehle@nist.gov, National Institute of Standards and Technology, Gaithersburg, MD, 20899, United States
Curt A. Richter
Affiliation:
curt.richter@nist.gov, National Institute of Standards and Technology, Gaithersburg, MD, 20899, United States
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Abstract

In this paper, we have reported the fabrication and characterization of nanowire electromechanical switches consisting of chemical-vapor-deposition grown silicon nanowires suspended over metal electrodes. The devices operate as transistors with the suspended part of the nanowire bent to touch metal electrode via electromechanical force by applying voltage. The reversible switching, large on/off current ratio, small subthreshold slope and low switching energy compared to current CMOSFET make the switches very attractive for logic device application. In addition, we have developed a physical model to investigate the switching characteristics and extract the material properties.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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