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SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations

Published online by Cambridge University Press:  01 February 2011

Rachel Oliver ,
Menno J. Kappers ,
Joy Sumner ,
Ranjan Datta  and
Colin J. Humphreys
Rachel Oliver
Affiliation:
rao28@cam.ac.uk, University of Cambridge, Materials Science and Metallurgy, Pembroke Street, Cambridge, N/A, CB2 3QZ, United Kingdom
Menno J. Kappers
Affiliation:
mjk30@cam.ac.uk
Joy Sumner
Affiliation:
js394@cam.ac.uk
Ranjan Datta
Affiliation:
rd280@cam.ac.uk
Colin J. Humphreys
Affiliation:
colin.humphreys@msm.cam.ac.uk
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Abstract

Fast-turnaround, accurate methods for the assessment of threading dislocation densities in GaN are an essential research tool. Here, we present an in-situ surface treatment for use in MOVPE (metal-organic vapour phase epitaxy) growth, in which GaN is exposed to a SiH4 flux at 860 °C in the presence of NH3. Subsequent characterisation by atomic force microscopy shows that the treatment is effective in increasing edge and mixed/screw dislocation pit sizes on both n- and p-type material, and on partially coalesced GaN layers.

Keywords

nitridedislocationsscanning probe microscopy (SPM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF24-06
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

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