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SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations

Published online by Cambridge University Press:  01 February 2011

Rachel Oliver
Affiliation:, University of Cambridge, Materials Science and Metallurgy, Pembroke Street, Cambridge, N/A, CB2 3QZ, United Kingdom
Menno J. Kappers
Joy Sumner
Ranjan Datta
Colin J. Humphreys
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Fast-turnaround, accurate methods for the assessment of threading dislocation densities in GaN are an essential research tool. Here, we present an in-situ surface treatment for use in MOVPE (metal-organic vapour phase epitaxy) growth, in which GaN is exposed to a SiH4 flux at 860 °C in the presence of NH3. Subsequent characterisation by atomic force microscopy shows that the treatment is effective in increasing edge and mixed/screw dislocation pit sizes on both n- and p-type material, and on partially coalesced GaN layers.

Research Article
Copyright © Materials Research Society 2006

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