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SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations

Published online by Cambridge University Press:  01 February 2011

Rachel Oliver
Affiliation:
rao28@cam.ac.uk, University of Cambridge, Materials Science and Metallurgy, Pembroke Street, Cambridge, N/A, CB2 3QZ, United Kingdom
Menno J. Kappers
Affiliation:
mjk30@cam.ac.uk
Joy Sumner
Affiliation:
js394@cam.ac.uk
Ranjan Datta
Affiliation:
rd280@cam.ac.uk
Colin J. Humphreys
Affiliation:
colin.humphreys@msm.cam.ac.uk
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Abstract

Fast-turnaround, accurate methods for the assessment of threading dislocation densities in GaN are an essential research tool. Here, we present an in-situ surface treatment for use in MOVPE (metal-organic vapour phase epitaxy) growth, in which GaN is exposed to a SiH4 flux at 860 °C in the presence of NH3. Subsequent characterisation by atomic force microscopy shows that the treatment is effective in increasing edge and mixed/screw dislocation pit sizes on both n- and p-type material, and on partially coalesced GaN layers.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

[1] Datta, R., Kappers, M.J., Barnard, J.S., Humphreys, C.J., Appl. Phys. Lett. 85, 3411 (2004).CrossRefGoogle Scholar
[2] Weyher, J.L., Brown, P.D., Rouviere, J.L., Wosinski, T., Zauner, A.R.A., Grzegory, I., J. Cryst. Growth 210, 151 (2000).CrossRefGoogle Scholar
[3] Youtsey, C., Romano, L.T., Molnar, R.J., Adesida, I., Appl. Phys. Lett. 74, 3537 (1999).CrossRefGoogle Scholar
[4] Tanaka, S., Takeuchi, M., Aoyagi, Y., Jpn. J. Appl. Phys., Part 2 39, L831-L834 (2000).CrossRefGoogle Scholar
[5] Oliver, R.A., Kappers, M.J., van der Laak, N.K., Humphreys, C.J., phys. stat. sol. submitted.Google Scholar

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SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations
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