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Si nanowire-gold nanoparticles heterostructures for surface enhanced Raman spectroscopy

Published online by Cambridge University Press:  18 July 2013

Yuan Li
Affiliation:
Metallurgical and Materials Engineering Department, Center for Materials for Information Technology (MINT), The University of Alabama, Tuscaloosa, AL 35487, U.S.A.
John C. Dykes
Affiliation:
REU, Department of Mathematics, The University of Alabama, Tuscaloosa, AL 35487, U.S.A
Nitin Chopra
Affiliation:
Metallurgical and Materials Engineering Department, Center for Materials for Information Technology (MINT), The University of Alabama, Tuscaloosa, AL 35487, U.S.A. Department of Biological Sciences, The University of Alabama, Tuscaloosa, AL 35487, U.S.A.
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Abstract

Here, we present a method for the fabrication of silicon (Si) nanowires and Si nanowire-gold nanoparticles (AuNPs) heterostructures for surface-enhanced Raman scattering (SERS) effect. Branched Si nanowires were grown in atmospheric pressure chemical vapor deposition (CVD) process. Further decoration of these nanowires was achieved by a galvanic deposition of gold followed by annealing procedure. This resulted in Si nanowires-AuNPs heterostructures with controlled size and inter-particle spacing. Furthermore, the fabricated heterostructures were studied for Raman signal enhancement of the low concentration (∼10-6 M) dye (Rhodamine 6G, R6G). It was observed that heterostructuring of SiNWs with AuNPs led to improvement of R6G signals as compared to AuNPs dispersed on flat Si substrate.

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Copyright
Copyright © Materials Research Society 2013 

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