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Si Nanocrystals as Sensitizers for Er PL in SiO2

Published online by Cambridge University Press:  10 February 2011

M. Forcales
Affiliation:
Van der Waals - Zeeman Institute, University of Amsterdam, Valckenierstraat 65, NL-1018 XE Amsterdam, The Netherlands
M. Wojdak
Affiliation:
Van der Waals - Zeeman Institute, University of Amsterdam, Valckenierstraat 65, NL-1018 XE Amsterdam, The Netherlands
M.A.J. Klik
Affiliation:
Van der Waals - Zeeman Institute, University of Amsterdam, Valckenierstraat 65, NL-1018 XE Amsterdam, The Netherlands
T. Gregorkiewicz
Affiliation:
Van der Waals - Zeeman Institute, University of Amsterdam, Valckenierstraat 65, NL-1018 XE Amsterdam, The Netherlands
O. B. Gusev
Affiliation:
A.F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St.Petersburg, Russia
G. Franzò
Affiliation:
INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via Santa Sofia 64, I-95123 Catania, Italy
D. Pacifici
Affiliation:
INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via Santa Sofia 64, I-95123 Catania, Italy
F. Priolo
Affiliation:
INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via Santa Sofia 64, I-95123 Catania, Italy
F. Iacona
Affiliation:
CNR-IMM, Stradale Primosole 50, I-95121 Catania, Italy
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Abstract

Sensitization of Er3+ photoluminescence in SiO2 layers by silicon nanocrystals has been investigated under resonant and nonresonant pulsed optical pumping. We observed that the very efficient channel of erbium excitation introduced by the nanocrystals can be saturated when very high pulsed photon flux is used. While this channel is saturated, tuning to the resonant excitation wavelength results in an increase of erbium-related photoluminescence, indicating that direct and indirect excitations can take place simultaneously.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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Si Nanocrystals as Sensitizers for Er PL in SiO2
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