SET and RESET Kinetics of SrTiO3-based Resistive Memory Devices
Published online by Cambridge University Press: 13 May 2015
In this paper we present a study of the switching kinetics of SrTiO3 based resistive switching memory devices. A pulse scheme is used to cycle the cells between the high resistive state (HRS) and the low resistive state (LRS) thereby monitoring the transient currents for a precise analysis of the SET and RESET transitions. By variation of the width and amplitude of the applied pulses the switching kinetics are studied between 10-8 and 104 s. Taking the pre-switching currents into account, a power dependency of the SET is found that emphasizes the importance of local Joule heating for the nonlinearity of the switching kinetics.
- MRS Online Proceedings Library (OPL) , Volume 1790: Symposium AA – Materials for Beyond the Roadmap Devices in Logic, Power and Memory , 2015 , pp. 7 - 12
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