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Semiconductive Properties of Alternating Mg/C Multi-layer Films with Hydroxylation Treatment

Published online by Cambridge University Press:  20 December 2012

Masafumi Chiba
Affiliation:
Department of Materials Chemistry, Tokai University, 317 Nishino, Numazu, Shizuoka, 410-0395, Japan
Daisuke Endo
Affiliation:
Department of Materials Chemistry, Tokai University, 317 Nishino, Numazu, Shizuoka, 410-0395, Japan
Kenichi Haruta
Affiliation:
Department of Electrical and Electronic Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa, 259-1292, Japan
Hideki Kimura
Affiliation:
Department of Electrical and Electronic Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa, 259-1292, Japan
Hideo Kiyota
Affiliation:
Department of Mechanical Systems Engineering, Tokai University, 9-1-1 Toroku, Kumamoto, Kumamoto, 862-8652, Japan
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Abstract

A Mg(OH)2–C transparent conductive film was prepared using the sputtering method by the initial formation of a Mg-C film generated by the alternate layering of Mg and C on a rotating substrate and subsequent exposure of the film to atmospheric water vapor. To examine the influence exerted by the Mg/C layers of the starting film sample on semiconductivity,evaluations of the electrical conductivity properties of the film during the hydroxylation process and the optical properties after the hydroxylation process were carried out. As a result, although no effects on the characteristics of the electrical conductivity properties associated with the composition or number of layers in the films could be confirmed, it was determined that the films possessed the characteristics of semiconductors. On the other hand, the optical properties were found to be affected by the composition and number of layers of the Mg/C films.

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Copyright
Copyright © Materials Research Society 2012 

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References

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Semiconductive Properties of Alternating Mg/C Multi-layer Films with Hydroxylation Treatment
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