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Self-Consistent Tight-Binding Methods Applied to Semiconductor Nanostructures

Published online by Cambridge University Press:  10 February 2011

Aldo Di Carlo*
Affiliation:
INFM-Dipartimento di Ingegneria Elettronica, Università di Roma “Tor Vergata”, 00133 Roma, Italy, dicarlo@eln.utovrm.it
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Abstract

A self-consistent tight-binding approach applied to semiconductor nanostructure is presented. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation. Example of applications are given for High Electron Mobility Transistors (HEMTs) and non-linear optical devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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