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Self-Consistent Tight-Binding Methods Applied to Semiconductor Nanostructures

Published online by Cambridge University Press:  10 February 2011

Aldo Di Carlo
Aldo Di Carlo*
Affiliation:
INFM-Dipartimento di Ingegneria Elettronica, Università di Roma “Tor Vergata”, 00133 Roma, Italy, dicarlo@eln.utovrm.it
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Abstract

A self-consistent tight-binding approach applied to semiconductor nanostructure is presented. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation. Example of applications are given for High Electron Mobility Transistors (HEMTs) and non-linear optical devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 491: Symposium R – Tight Binding Approach to Computational Materials Science , 1997 , 389
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Wood, D. M., Wei, S.-H., and Zunger, Alex, Phys. Rev. B37, 1342 (1988);CrossRefGoogle Scholar
Park, C. H. and Chang, K. J., Phys. Rev. B47, 12709 (1993).CrossRefGoogle Scholar
2. Bastard, G., Wave mechanics applied to semiconductor heterostructures, Les Edition de Physique, Les Ulis Cedex, 1988.Google Scholar
3. Morkoç, H., Unlu, H., Ji, G., Principles and Technology of MODFETS, John Wiley & Sons, Chichester, 1991.Google Scholar
4. Slater, J. C., Koster, G. F., Phys. Rev. 94, 1498 (1954);CrossRefGoogle Scholar
Bullet, D. W., Solid State Physics, 35, 129 (1980);CrossRefGoogle Scholar
Majewski, J. A., Vogl, P., The structure of binary compounds edited by de Boer, F. R. and Pettifor, D. G., Elsevier, Amsterdam, 1989.Google Scholar
5. Boykin, T.B., van der Wagt, J.P.A., and Harris, J.S., Phys. Rev. B43, 4777 (1991).CrossRefGoogle Scholar
6. Di Carlo, A., Lugli, P., Semicon. Sci. Technol. 10, 1673 (1995).CrossRefGoogle Scholar
7. Schulman, J. N., Chang, Y. C., Phys. Rev. B31, 2056 (1985).CrossRefGoogle Scholar
8. Zunger, A., Yeh, C.-Y., Wang, L.-W., Zang, S. B., Proceedings ICPS–22, 1763 (1994).Google Scholar
9. Di Carlo, A., Pescetelli, S., Paciotti, M., Lugli, P., Graf, M., Solid State Communications 98, 803 (1996)CrossRefGoogle Scholar
10. Di Carlo, A., Vogl, P., and Pötz, W., Phys. Rev. B50, 8358 (1994).CrossRefGoogle Scholar
11. Froyen, S., Phys. Rev. B39, 3168 (1989).CrossRefGoogle Scholar
12. Anderson, E., Bai, Z., Bischof, C., Demmel, J., Dongarra, J., Du Croz, J., Greenbaum, A., Hammarling, S., McKenney, A., Ostrouchov, S., Sorensen, D., LAPACK User's Guide. SIAM, Philadelphia, 1992.Google Scholar
13. Press, W. H., Flannery, B. P., Teukolsky, S. A., and Vetterling, W. T., Numerical recipes, Cambrige University Press, 1986.Google Scholar
14. Graf, M. and Vogl, P., Phys. Rev. B51, 4940 (1995).CrossRefGoogle Scholar
15. Priester, C., Allan, G., Lannoo, M., Phys. Rev B 37, 8519 (1988); 38, 9870 (1988); 38, 13451 (1988);CrossRefGoogle Scholar
Foulon, Y., Priester, C., Phys. Rev. B 44 5889 (1991).CrossRefGoogle Scholar
16. Aniel, F., Boucaud, P., Sylvestre, A., Crozat, P., Julien, F. H., Adde, R., and Jin, Y., J. App. Phys. 77, 2184 (1995): N. Shigekawa, T. Enoki, T. Furuta, and H. ItoCrossRefGoogle Scholar
17. Reale, A., Di Carlo, A., and Lugli, P., VLSI-design, in press (1997)Google Scholar
18. Reale, A., Di Carlo, A., and Lugli, P., In Proc. V-European Gallium Arsenide and related III-V compound: Application symposium (GAAS 97) Bologna, Italy, 1997, pag. 305 Google Scholar