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A Self-Annealing Technique for Simultaneous Titanium Silicide and N+/P Junction Formation

Published online by Cambridge University Press:  25 February 2011

Manuela Finetti
Affiliation:
CNR-LAMEL, Via Castagnoli 1, 40126 Bologna, Italy
E. Gabilli
Affiliation:
CNR-LAMEL, Via Castagnoli 1, 40126 Bologna, Italy
R. Lotti
Affiliation:
CNR-LAMEL, Via Castagnoli 1, 40126 Bologna, Italy
G. Lulli
Affiliation:
CNR-LAMEL, Via Castagnoli 1, 40126 Bologna, Italy
P.G. Merli
Affiliation:
CNR-LAMEL, Via Castagnoli 1, 40126 Bologna, Italy
R. Nipoti
Affiliation:
CNR-LAMEL, Via Castagnoli 1, 40126 Bologna, Italy
M. Vittori Antisari
Affiliation:
ENEA - Div. Scienza dei Materiali -CRE- Casaccia, CP 2400 - Roma, Italy
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Abstract

- P+ self-annnealing implantations through evaporated Ti is performed to simultaneously form the silicide and the junction underneath, avoiding the need for further post-implantation thermal treatments. The formation of the TiSi2, phase and the good quality of the silicon-silicide interface are observed, when operating at power densities ≤ 16 W/cm2. Deep phosphorus distributions extending below the silicide down to 480÷600 nm are obtained.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

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References

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A Self-Annealing Technique for Simultaneous Titanium Silicide and N+/P Junction Formation
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