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A Selective/Non-Selective Epitaxy Process For A Novel Sige Hbt Architecture

Published online by Cambridge University Press:  10 February 2011

J. Schiz
Affiliation:
Department of Electronics and Computer Science, University of Southampton, Southampton, S017 1B1J, UK.
J. M. Bonar
Affiliation:
Department of Electronics and Computer Science, University of Southampton, Southampton, S017 1B1J, UK.
P Shburn
Affiliation:
Department of Electronics and Computer Science, University of Southampton, Southampton, S017 1B1J, UK.
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Abstract

A selective/non-selective epitaxy process for a novel self-aligned SiGe HBT structure is described. It is shown that damage in the silicon substrate induced by reactive ion etching can be effectively removed and that this allows the growth of high quality selective and nonselective epitaxy. Control of the base thickness and doping can be maintained during selective and non-selective epitaxy, thereby demonstrating the feasability of producing the self-aligned HBT structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

[1] Oda, K., Ohue, E., Tanabe, M., Shimamoto, H., Onai, T., and Washio, K., “130 GHz fT SiGe HBT technology,” in IEEE International Electron Device Meeting, pp. 791794, 1997.Google Scholar
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[4] Schimmel, D. G., “A comparison of chemical etches for revealing <100> silicon crystal defects,” Journal of the Electrochemical Society, vol.123, no. 5, pp. 734741, 1976.CrossRefGoogle Scholar
[5] Schiz, J., Bonar, J., and Ashburn, P., “A novel self-aligned SiGe HBT structure using selective and non-selective epitaxy,” in 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, pp. 255260, 1997.Google Scholar
[6] Bonar, J., Schiz, J., and Ashburn, P., “Improved epitaxial quality following etch damage removal on plasma etched silicon surfaces,” in Microsc. Semicond. Mater. Conf., vol.157 of Inst. Phys. Conf. Series, pp. 407–410, 1997.Google Scholar

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