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Selective one-step Chemical Etching of the Silicon Nitride/Silicon PBL stack for 0.5μm device Fabrication

Published online by Cambridge University Press:  15 February 2011

David Ziger
Affiliation:
ATT Bell Laboratories, 9333 S John Young Parkway, Orlando, FL 32819
Susan Vitkavage
Affiliation:
ATT Bell Laboratories, 9333 S John Young Parkway, Orlando, FL 32819
Charles Oberdorfer
Affiliation:
ATT Bell Laboratories, 9333 S John Young Parkway, Orlando, FL 32819
Juli Eisenberg
Affiliation:
ATT Bell Laboratories, 555 Union Blvd, Allentown, PA 18103
Michael Hughes
Affiliation:
ATT Bell Laboratories, 555 Union Blvd, Allentown, PA 18103
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Abstract

Abstract Wet chemical removal of a silicon nitride/silicon Poly Buffer LOCUS (PBL) film stack with a phosphoric/nitric acid solution was characterized. Though silicon nitride etch rates remain constant, silicon etch rates decrease as a function of loading which severely limits the usable lifetime of the bath. This is caused by buildup of etching products which limits the amount of silicon that can be dissolved in the solution. Addition of HF to the phosphoric/nitric acid solution enhances the dissolution chemistry presumably by decomposing the silica reaction products and shifting the equilibrium. Characterization of this process was done to determine whether it could be applied towards PBL removal. Depending on the relative amounts of HF and HNO3 added, silicon etch rates could be enhanced by two orders of magnitude (200–400A/min) and silicon nitride etch rates by a factor of two. Selectivities for etching silicon to oxide and silicon nitride to oxide were typically between 8–12:1 and 8–20:1 respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

1 van Gelder, W., Hauser, V.E. J Electro. Chem. Soc., 144, 869 (1967).CrossRefGoogle Scholar
2 Chung, B, Fetcho, R.F. “Silicon Nitride Etch Process in Phosphoric Acid”, unpublished AT&T Technical Memorandum, 1987.Google Scholar
3 Ziger, D., “Method Of Integrated Circuit Fabrication Including Selective Etching Of Silicon and Silicon Compounds”, US Patent 5,310,457.Google Scholar

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Selective one-step Chemical Etching of the Silicon Nitride/Silicon PBL stack for 0.5μm device Fabrication
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Selective one-step Chemical Etching of the Silicon Nitride/Silicon PBL stack for 0.5μm device Fabrication
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