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Scanning tunneling microscopy observation of surface reconstruction of GaN on sapphire and 6H-SiC
Published online by Cambridge University Press: 10 February 2011
Abstract
We report studies of the surface structure of MBE-grown GaN layers on sapphire (0001) and 6H-(0001) SiC substrates. A different set of reconstructions is observed for nitrogen-face and gallium-face layers. The gallium-face has so far only been grown on MOCVD GaN/ sapphire substrates, while the nitrogen-face has been obtained on SiC and bare sapphire substrates.
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- Copyright © Materials Research Society 1998
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