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Scanning Tunneling Microscopic Study of the Growth Process in Photochemical Vapor Deposition of Aluminum Film

Published online by Cambridge University Press:  26 February 2011

Mitsugu Hanabusa  and
Kouji Sahara
Mitsugu Hanabusa
Affiliation:
Toyohashi University of Technology, Department of Electrical and Electronic Engineering, Tenpaku, Toyohashi 441, Japan
Kouji Sahara
Affiliation:
Toyohashi University of Technology, Department of Electrical and Electronic Engineering, Tenpaku, Toyohashi 441, Japan
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Abstract

Aluminum thin films were photodeposited on silicon wafer from dimethyl-aluminum hydride under illumination of the ultraviolet photons generated by a deuterium lamp with a distinguished wavelength dependence. Namely, the growth rates increase linearly with vapor pressure under illumination of the l60-nm vacuum ultraviolet band from the lamp, while the growth starts above 0.3 mTorr only with the 240-nm band. To study the early stage of photo-deposition of Al, we constructed a scanning tunneling microscope and observed Al, islands. Steep sides were observed on islands with the distinguished boundary between vertical and horizontal growth. The shape of islands formed in the illuminated region and in the dark area was identical, thus indicating the absence of photo-induced migration effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 607
Copyright
Copyright © Materials Research Society 1991

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References

1. Hoeven, A.J., Lenssinck, J.M., Uijkkamp, D., van Loenen, E.J., and Dieleman, J., Phys. Rev. Lett. 63, 1830 (1989).Google Scholar
2. Hanabusa, M., Mater. Sci. Rep. 2, 51 (1987).Google Scholar
3. Aoyagi, Y., Doi, A., Iwai, S., and Namba, S., J. Vac. Sci. Technol. B5, 1460 (1987).Google Scholar
4. Hanabusa, U.M., Oikawa, A., and Ying Cai, Peng, J. Appl. Phys. 66, 3268 (1989);Google Scholar
Hanabusa, U.M., Oikawa, A., and Ying Cai, Peng, J. Appl. Phys. 66, 3268 (1989)67, 3208 (1990).Google Scholar
5. Hanabusa, M. and Ikeda, M. in In-Situ Patterning: Selective Area Deposition and Etching, edited by Bernhardt, A.F., Black, J.G., and Rosenberg, R. (Mater. Res. Soc. Proc. 158, Pittsburgh, PA 1990) pp. 135–140.Google Scholar
6. Kuk, Y. and Silverman, P.J., Rev. Sci. Instrum. 60, 165 (1989).Google Scholar
7. Mantell, D.A., Appl. Phys. Lett. 53, 1387 (1988).Google Scholar
8. Shinzawa, T., Sugai, K., Kishida, S., and Okabayashi, H., Mater. Res. Soc. Symp. Proc. VLSI V. 377 (1990).Google Scholar
9. Thornton, J.A., Ann. Rev. Mater. Sci. 7, 239 (1977).Google Scholar