Skip to main content Accessibility help
×
Home
Hostname: page-component-55597f9d44-t4qhp Total loading time: 0.307 Render date: 2022-08-16T00:20:50.729Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "useRatesEcommerce": false, "useNewApi": true } hasContentIssue true

Scalability of MOCVD-deposited Hafnium Oxide

Published online by Cambridge University Press:  01 February 2011

S. Van Elshocht
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Heverlee, Belgium
R. Carter
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Heverlee, Belgium
M. Caymax
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Heverlee, Belgium
M. Claes
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Heverlee, Belgium
T. Conard
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Heverlee, Belgium
L. Daté
Affiliation:
Applied Materials, Meylan, Francesven.vanelshocht@imec.be
S. De Gendt
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Heverlee, Belgium
V. Kaushik
Affiliation:
ISMT, 2706 Montopolis Drive, Austin, Texas, US
A. Kerber
Affiliation:
ISMT, 2706 Montopolis Drive, Austin, Texas, US
J. Kluth
Affiliation:
ISMT, 2706 Montopolis Drive, Austin, Texas, US
G. Lujan
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Heverlee, Belgium
J. Pétry
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Heverlee, Belgium
D. Pique
Affiliation:
Applied Materials, Meylan, Francesven.vanelshocht@imec.be
O. Richard
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Heverlee, Belgium
E. Rohr
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Heverlee, Belgium
Y. Shimamoto
Affiliation:
Hitachi, 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8603,Japan
W. Tsai
Affiliation:
ISMT, 2706 Montopolis Drive, Austin, Texas, US
M.M. Heyns
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Heverlee, Belgium
Get access

Abstract

Because of aggressive downscaling to increase transistor performance, the physical thickness of the SiO2 gate dielectric is rapidly approaching the limit where it will only consist of a few atomic layers. As a consequence, this will result in very high leakage currents due to direct tunneling. To allow further scaling, materials with a k-value higher than SiO2 (“high-k materials”) are explored, such that the thickness of the dielectric can be increased without degrading performance.

Based on our experimental results, we discuss the potential of MOCVD-deposited HfO2 to scale to (sub)-1-nm EOTs (Equivalent Oxide Thickness). A primary concern is the interfacial layer that is formed between the Si and the HfO2, during the MOCVD deposition process, for both H-passivated and SiO2-like starting surfaces. This interfacial layer will, because of its lower k-value, significantly contribute to the EOT and reduce the benefit of the high-k material. In addition, we have experienced serious issues integrating HfO2 with a polySi gate electrode at the top interface depending on the process conditions of polySi deposition and activation anneal used. Furthermore, we have determined, based on a thickness series, the k-value for HfO2 deposited at various temperatures and found that the k-value of the HfO2 depends upon the gate electrode deposited on top (polySi or TiN).

Based on our observations, the combination of MOCVD HfO2 with a polySi gate electrode will not be able to scale below the 1-nm EOT marker. The use of a metal gate however, does show promise to scale down to very low EOT values.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.International Technology Roadmap for Semiconductors 2001 Edition.Google Scholar
2. Lucovsky, G. et al., J. Vac. Sci. Technol. A, 17, 1340, 1999.CrossRefGoogle Scholar
3. Hobbs, C. et al., International Symp. On VLSI Technology, System and Applications, p. 204, 2001 Google Scholar
4.Manuscript submitted to J. Electrochem. SocGoogle Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Scalability of MOCVD-deposited Hafnium Oxide
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Scalability of MOCVD-deposited Hafnium Oxide
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Scalability of MOCVD-deposited Hafnium Oxide
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *