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Room-Temperature Operation of Vertical-Cavity Surface-Emitting Laser on Si Substrate

Published online by Cambridge University Press:  21 February 2011

Takashi Egawa
Affiliation:
Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Yoshiaki Hasegawa
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Takashi Jimbo
Affiliation:
Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Masayoshi Umeno
Affiliation:
Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
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Abstract

AlGaAs/GaAs single-quantum-well (SQW) vertical-cavity surface-emitting laser diodes (VCSELDs) with 20 pairs of AlAs (71 nm)/GaAs (59 nm) distributed Bragg reflectors (DBRs) were grown on Si substrates by metalorganic chemical vapor deposition using the conventional two-step growth technique. The measured reflectivity of the 20 pairs of AlAs/GaAs DBRs was 93 % at the wavelength of 860 nm. The AlGaAs/GaAs SQW VCSELD on Si exhibited a threshold current of 79 mA and a threshold current density of 4.9 kA/cm2 under pulsed condition at room temperature. The emission wavelength was 840.3 nm with the full width at half maximum of 0.28 nm.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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