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Room Temperature ZnO/Zn0.8Mg0.2O Resonant Tunneling Devices For Microwave Applications

Published online by Cambridge University Press:  18 March 2011

Aravind Inumpudi
Affiliation:
Department of Electrical and Computer Engineering, University of Maryland, College Park, MD 20742
Agis A. Iliadis
Affiliation:
Department of Electrical and Computer Engineering, University of Maryland, College Park, MD 20742
Supab Choopun
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742
R. D. Vispute
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742
T. Venkatesan
Affiliation:
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, MD 20742
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Abstract

A ZnO/Zn0.8Mg0.2O double barrier resonant tunneling device (DBRTD) is reported here for the first time. The structure consists of 6 nm ZnO quantum wells and 7 nm Zn0.8Mg0.2O barriers grown by pulsed laser deposition (PLD) on c-cut sapphire substrates. Negative differential resistance (NDR) peaks were obtained at room temperature. The structure is developed by using an indium-tin oxide (ITO) layer both as the back contact electrode and as an etch-stopping layer. The PLD growth quality, wet etching processing for developing the mesa structure, and the I-V characteristics of the device are reported.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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