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Room Temperature Dielectric Function of Low Dimensional TlMeX2

Published online by Cambridge University Press:  01 February 2011

Nazim Mamedov
Affiliation:
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 593–8531, Japan
Kazuki Wakita
Affiliation:
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 593–8531, Japan
Seiji Akita
Affiliation:
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 593–8531, Japan
Yoshikazu Nakayama
Affiliation:
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 593–8531, Japan
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Abstract

Room temperature ellipsometric measurements of low dimensional TlMeX2 (Me=Ga, In; X=S,Se,Te) were performed in the photon energy range 1.5–6.5e V.Obtained ellipsometric data were then treated with allowance for optical anisotropy of the above materials. The components of dielectric function tensor were determined. The structures of the obtained dielectric function are interpreted in terms of the angle resolved photoemission and band structure results. The contribution of the atomic states of each atom (Tl, In, Se) in the band states in the point M of the Brillouin zone is traced back using LCAO analysis. An ultraviolet window in the joint density of electronic states of some of TlMeX2 is disclosed and substantiated to be a sign of ferroelectricity at room temperature. For the first time the nanorods of TlMeX2 are demonstrated.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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