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The Role of Impurities in LP-MOCVD Grown Gallium Nitride

Published online by Cambridge University Press:  21 February 2011

C.Y. Hwang
Affiliation:
Rutgers University, Piscataway, NJ 08855
Y. Li
Affiliation:
Rutgers University, Piscataway, NJ 08855
M. J. Schurman
Affiliation:
Rutgers University, Piscataway, NJ 08855
W. E. Mayo
Affiliation:
Rutgers University, Piscataway, NJ 08855
Y. Lu
Affiliation:
Rutgers University, Piscataway, NJ 08855
R. A. Stall
Affiliation:
EMCORE Corp., Somerset, NJ 08873
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Abstract

We have investigated the relationship of the Hall electron mobility to the background carrier concentration in low pressure MOCVD grown GaN. The highest electron mobility (400 cm2 /V•s) of the unintentionally doped GaN was obtained at a carrier concentration of 1×1017 cm−3 and samples with carrier concentrations lower than this exhibited lower mobilities. SIMS analysis shows C and O concentrations in the range of 2–3×1016 cm−3 and H in the 2–3×1017 cm−3 range. Structural defects, stoichiometry and impurities in the GaN films grown under different conditions are investigated to understand their relationship to the electron Hall mobilities. In particular, different growth temperatures and pressures were used to grow undoped GaN and modify the background doping effect of the impurities.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

1 Russell, T. J., Wilson, C. L. and Gaitan, M., IEEE Trans. Electron Dev. ED–30, 1662 (1983).CrossRefGoogle Scholar
2 Hwang, C. Y., Schurman, M. J., Mayo, W. E., and Stall, R. A., J. Vac. Sci. Technol. A13, 672 (1995).CrossRefGoogle Scholar
3 Lester, S. D., Ponce, F. A., Craford, M. G. and Steigerwald, D. A., Appl. Phys. Lett. 66, 1249 (1995).CrossRefGoogle Scholar
4 Chin, V. W. L., J. Appl. Phys. 75, 7365 (1994).CrossRefGoogle Scholar
5 MacKenzie, J. D., Abernathy, C. R. and Pearton, S. J., presented at the 1995 MRS Spring Meeting, San Francisco, CA, 1995 (unpublished).Google Scholar

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