Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-19T09:31:45.018Z Has data issue: false hasContentIssue false
  • English
  • Français

Robust Reaction-Transport Models of Movpe Reactors

Published online by Cambridge University Press:  10 February 2011

C. Theodoropoulos ,
H. K. Moffat  and
T. J. Mountziaris
C. Theodoropoulos
Affiliation:
Department of Chemical Engineering, State University of New York, Buffalo, NY 14260.
H. K. Moffat
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
T. J. Mountziaris
Affiliation:
Department of Chemical Engineering, State University of New York, Buffalo, NY 14260.
Get access

Abstract

A simple gas-phase and surface kinetic model describing the Metalorganic Vapor Phase Epitaxy (MOVPE) of GaAs from trimethyl-gallium (TMG) and arsine has been extracted from reported reaction mechanisms through sensitivity analysis. This model was coupled with fundamental descriptions of the flow, heat and mass transfer in MOVPE reactors. All the uncertainties of the model were lumped into the two rate constants of the surface growth reaction. Finite element simulations of GaAs growth in a rotating-disk MOVPE reactor reported in the literature were used to fit the two unknown rate constants. Without any adjustment, the model could predict observed growth rates at higher susceptor rotational rates. A more serious robustness test was the fully coupled 2-D simulation of GaAs growth in a horizontal MOVPE reactor by using a state-of-the-art code (MPSalsa) developed at Sandia National Laboratories. The model predicted observed growth rates reasonably well in 2-D fully coupled simulations of flow, heat and mass transfer. Further development of the kinetic model by testing different kinetic scenaria in 2- and 3-d simulations and by using data obtained at kinetically-limited growth conditions is planned in order to develop a reactor-independent simulator of the MOVPE of GaAs. Such a model will be essential for the development of a conceptual virtual MOVPE reactor, which can be used for reactor design, optimization and model-based control.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 155
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kisker, D.W. and Kuech, T.F. in Handbook of Crystal Growth, vol. 3, edited by Hurle, D.T.J. (Elsevier Science B.V., 1994), pp. 93–154.Google Scholar
2. Breiland, W.G. and Killeen, K.P., J. Appl. Phys. 78, 6726 (1995).Google Scholar
3. Jensen, K.F. in Handbook of Crystal Growth, vol. 3, edited by Hurle, D.T.J. (Elsevier Science B.V., 1994), pp. 541–599.Google Scholar
4. Moffat, H.K. and Jensen, K.F., J. Crystal Growth 77, 108 (1986).Google Scholar
5. Coltrin, M.E. and Kee, R.J., Mater. Res. Soc. Symp. Proc. 145, 119 (1989).Google Scholar
6. Tirtowidjojo, M. and Pollard, R., J. Crystal Growth 93, 108 (1988).Google Scholar
7. Mountziaris, T.J. and Jensen, K.F., J. Electrochem. Soc. 138, 2426 (1991).Google Scholar
8. Ingle, N.K., Theordoropoulos, C., Mountziaris, T.J., Wexler, R.M. and Smith, F.T.J., J Crystal Growth 167, 543 (1996).Google Scholar
9. Mountziaris, T.J., Kalyanasundaram, S. and Ingle, N.K., J. Crystal Growth 131, 283 (1993).Google Scholar
10. Banse, B.A. and Creighton, J.R., Appl. Phys. Lett. 60, 856 (1992).Google Scholar
11. Donnelly, V.M. and Robertson, A., Surf. Sci. 293, 93 (1993).Google Scholar
12. Deane, A.E., Kevrekidis, I.G., Karniadakis, G.E., Orszag, S.A., Phys. Fluids A 3, 2337 (1991)Google Scholar
13. Wang, C.A., Patnaik, S., Caunt, J.W. and Brown, R.A., J. Crystal Growth 93, 228 (1988).Google Scholar
14. van de Ven, J., Rutten, G.J.M., Raaymakers, M.J. and Giling, L.J., J. Crystal Growth 76, 352 (1986).Google Scholar
15. Jacko, M.G. and Price, S.J.W., Can. J. Chem 41, 1560 (1963).Google Scholar
16. Shadid, J.N., Moffat, H.K., Hutchinson, S.A., Hennigan, G.L., Devine, K.D. and Salinger, A.G., Sandia National Laboratories Report, SAND95–2752 (1996).Google Scholar
17. Kee, R.J., Rupley, F.M., Meeks, E. and Miller, J.A., Sandia Report, SAND96–8216 (1996).Google Scholar
18. Coltrin, M.E., Kee, R.J., Rupley, F.M. and Meeks, E., Sandia Report, SAND96–8217 (1996).Google Scholar
19. Ingle, N.K. and Mountziaris, T.J., J. Fluid Mech. 277, 249 (1994) and 316, 373 (1996).Google Scholar