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Response of a-Si:H Detectors to Protons and Alphas

Published online by Cambridge University Press:  26 February 2011

J. Dubeau
Affiliation:
Laboratoire de Physique Nucléaire, UniversitE de Montréal, Montréal, Canada
T. Pochet
Affiliation:
Laboratoire de Physique Nucléaire, UniversitE de Montréal, Montréal, Canada
A. Karar
Affiliation:
Laboratolre de Physique Corpusculaire, Collège de France, Paris, France
L. A. Hamel
Affiliation:
Laboratoire de Physique Nucléaire, UniversitE de Montréal, Montréal, Canada
B. Equer
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, Palaiseau, France
J. P. Martin
Affiliation:
Laboratoire de Physique Nucléaire, UniversitE de Montréal, Montréal, Canada
S. C. Gujrathi
Affiliation:
Laboratoire de Physique Nucléaire, UniversitE de Montréal, Montréal, Canada
A. Yelon
Affiliation:
Dgpartement de Genie Physique, Ecole Polytechnique, MontrEal, Canada
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Abstract

We measured the response of reverse-biased a-Si:H diodes, in the p-i-n geometry, to charged particles as a function of ionization, detector bias (V) and angle of incidence, in the ionization range of 10–300 keV/µm. In the two cases where the amount of signal was weak, namely at low biases or at low ionizations, the signal was extracted from the noise using a coincidence technique. The response was found to be roughly proportional to , at all values of dE/dx, in the bias range of 7 V to 50 V. The dependence of the charge collection efficiency on the ionization density indicates a strong plasma effect in the detector. This collection efficiency increases steeply when the ionization is decreased but no plateau has yet been reached, indicating that the plasma effect is still important at 10 keV/µm.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

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4. Equer, B. and Karar, A., ”Effect of Primary Ionization in Amorphous Silicon Detectors”, to be published in Nucl. Instr. and Meth.Google Scholar
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Response of a-Si:H Detectors to Protons and Alphas
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