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Residual Oxygen Determination In Silicon Epilayer, Comparison With Ftir Measurements

Published online by Cambridge University Press:  10 February 2011

F. Degas ,
G. Blondiaux  and
B. Pichaud
F. Degas
Affiliation:
CNRS CERI Orléans 45071 cedex2 France
G. Blondiaux
Affiliation:
CNRS CERI Orléans 45071 cedex2 France
B. Pichaud
Affiliation:
MATOP faculteéde Saint Jérome avenue de l'escadrille de Normandie Niemen case 151 13397 Marseille cedex 20 France
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Abstract

For power devices the use of silicon epilayer on CZ substrate is a solution to make devices with a low oxygen concentration in the active zone. Oxygen is probably one of the most important residual impurities in silicon samples. Usualy the determination of the interstitial oxygen is done by Fourier Transform Infra Red spectroscopy (FTIR). In this work we have determined oxygen by Charged Particle Activation Analysis (CPAA). The main difference between these two techniques is that CPAA gives the total oxygen concentration whereas FTIR gives interstitial oxygen.

We have determined the oxygen in 200μm thick silicon epilayer and studied its behavior during thermal treatments. Oxygen concentration is found in the range of 1015/cm3 just after the epitaxial process. After thermal treatment the concentration in the epilayer rose to several 1016/cm3 to 1017/cm3, depending on the treatment. A comparison with FTIR experiment is done and the amount of oxygen precipitate is determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 185
Copyright
Copyright © Materials Research Society 1998

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References

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