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Reliability of High Voltage 4H-SiC MOSFET Devices

Published online by Cambridge University Press:  01 February 2011

Sumi Krishnaswami
Affiliation:
sumi_krishnaswami@cree.com, Cree, Inc., SiC Power Device, 4600 Silicon Drive, Durham, NC, 27703, United States
Sei-Hyung Ryu
Affiliation:
Sei-Hyung_Ryu@Cree.com, Cree, Inc., SiC Power Device, 4600 Silicon Drive, Durham, NC, 27703, United States
Bradley Heath
Affiliation:
brad_heath@cree.com, Cree, Inc., SiC Power Device, 4600 Silicon Drive, Durham, NC, 27703, United States
Anant Agarwal
Affiliation:
anant_agarwal@cree.com, Cree, Inc., SiC Power Device, 4600 Silicon Drive, Durham, NC, 27703, United States
John Palmour
Affiliation:
john_palmour@cree.com, Cree, Inc., SiC Power Device, 4600 Silicon Drive, Durham, NC, 27703, United States
Aivars Lelis
Affiliation:
alelis@arl.army.mil, Army Research Labs, 2800 Powder Mill Road, Adelphi, MD, 20783, United States
Charles Scozzie
Affiliation:
sscozzie@arl.army.mil, Army Research Labs, 2800 Powder Mill Road, Adelphi, MD, 20783, United States
James Scofield
Affiliation:
james.scofield@wpafb.af.mil, Air Force Research Labs, 1950 Fifth St, Wright-Patterson AFB, OH, 45433, United States
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Abstract

The commercialization of 4H-SiC MOSFETs will greatly depend on the reliability of gate oxide. Long-term gate oxide reliability and device stability of 1200 V 4H-SiC MOSFETs are being studied, both under the on- and off-states. Device reliability is studied by stressing the device under three conditions: (a) Gate stress - a constant gate voltage of +15 V is applied to the gate at a temperature of 175°C. The forward I-V characteristics and threshold voltage are monitored for device stability, (b) Forward current stress – devices are stressed under a constant drain current of Id = 4 A and Vg = 20 V. The devices were allowed to self-heat to a temperature of Tsink = 125°C and the I-V curves are monitored with time, and (c) High temperature reverse bias testing at 1200 V and 175°C to study the reliability of the devices in the off-state. Our very first measurements on (a) and (b) show very little variation between the pre-stress and post-stress I-V characteristics and threshold voltage up to 1000 hrs of operation at 175°C indicating excellent stability of the MOSFETs in the on-state. In addition, high temperature reverse bias stress test looks very promising with the devices showing very little variation in the reverse leakage current with time.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

[1] Ryu, S-H., Krishnaswami, S., Hull, B., Heath, B., Das, M., Richmond, J., Agarwal, A., Palmour, J., Scofield, J., presented at ICSCRM in Pittsburgh, PA, 2005.Google Scholar
[2] Agarwal, A.K., Seshadri, S., Roland, L.B., IEEE Elec. Dev. Letters, Vol. 18, 1997, 592594.CrossRefGoogle Scholar
[3] Krishnaswami, S., Das, M., Hull, B., Ryu, S-H., Scofield, J., Agarwal, A., Palmour, J., IEEE International Reliability Physics Symposium (IRPS), 2005, pp. 592593.Google Scholar
[4] Maranowski, M., Cooper, J., IEEE Trans. Electron Devices, Vol. 46, 1999, pp. 520524.Google Scholar
[5] Krishnaswami, S., Das, M. K., Agarwal, A. K. and Palmour, J., Mat. Res. Soc. Symp. Proc., Vol. 815, 2004, pp. 205210.CrossRefGoogle Scholar

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