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Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 [.proportional]m Range.

Published online by Cambridge University Press:  21 March 2011

N.D. Zakharov
Affiliation:
Max-Planck Institute of Microstructure Physics, Halle/Saale, GERMANY
P. Werner
Affiliation:
Max-Planck Institute of Microstructure Physics, Halle/Saale, GERMANY
U. Gösele
Affiliation:
Max-Planck Institute of Microstructure Physics, Halle/Saale, GERMANY
N.N. Ledentsov
Affiliation:
Technical University of Berlin, GERMANY A.F.Ioffe Physical-Technical Institute of the RAS, St.Petersburg, RUSSIA
D. Bimberg
Affiliation:
Technical University of Berlin, GERMANY
N.A. Cherkashin
Affiliation:
A.F.Ioffe Physical-Technical Institute of the RAS, St.Petersburg, RUSSIA
N.A. Bert
Affiliation:
A.F.Ioffe Physical-Technical Institute of the RAS, St.Petersburg, RUSSIA
B.V. Volovik
Affiliation:
A.F.Ioffe Physical-Technical Institute of the RAS, St.Petersburg, RUSSIA
V.M. Ustinov
Affiliation:
A.F.Ioffe Physical-Technical Institute of the RAS, St.Petersburg, RUSSIA
N.A. Maleev
Affiliation:
A.F.Ioffe Physical-Technical Institute of the RAS, St.Petersburg, RUSSIA
A.E. Zhukov
Affiliation:
A.F.Ioffe Physical-Technical Institute of the RAS, St.Petersburg, RUSSIA
A.F. Tsatsul'nikov
Affiliation:
A.F.Ioffe Physical-Technical Institute of the RAS, St.Petersburg, RUSSIA
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Abstract

Transmission electron microscopy (TEM), and photoluminescence (PL) have been used to evaluate defects and the efficiency of defect-reduction techniques in structures with InAs quantum dots (QDs) for the 1.55 µm range grown at low substrate temperature (LT) using molecular beam epitaxy (MBE). We show that capping of the QDs with thin GaAs layer accompanied by growth interruption at 600oC (flash) allows to eliminate large islands, containing dislocations, while the smaller islands containing local defects (e.g. dislocation dipoles) still remain. If the flash procedure is accompanied with further depositing of thin AlAs cap layer, and followed by high temperature (~700oC) annealing (HTA), an almost complete elimination of defects is observed. The structures emit in the range of 1.55 µm due to lateral agglomerates of LTQDs. Simultaneously bright luminescence due to isolated QDs and GaAs matrix are detected at high excitation densities.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 [.proportional]m Range.
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Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 [.proportional]m Range.
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