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Recombination Parameters in InGaAsSb Epitaxial Layers for Thermophotovoltaic Applications

Published online by Cambridge University Press:  01 February 2011

R. J. Kumar
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
R. J. Gutmann
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
J.M. Borrego
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
P. S. Dutta
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
C. A. Wang
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420
R.U. Martinelli
Affiliation:
Sarnoff Corporation, Princeton, NJ 08543
G. Nichols
Affiliation:
Lockheed Martin, Schenectady, NY 12301
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Abstract

Radio-frequency (RF) photoreflectance measurements and one-dimensional device simulations have been used to evaluate bulk recombination parameters and surface recombination velocity (SRV) in doubly-capped 0.55-eV p-InGaAsSb epitaxial layers, doped at 2 × 1017 cm-3, for thermophotovoltaic (TPV) applications. Bulk lifetimes of 90 to 100 ns and SRVs of 680 cm/s to 3200 cm/s (depending on the capping layer) are obtained, with higher doping and higher bandgap capping layers most effective in reducing SRV. RF photoreflectance measurements and one-dimensional device simulations are compatible with a radiative recombination coefficient (B) of 3 × 10-11 cm3/s and Auger coefficient (C) of 1 × 10-28 cm6/s.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

1. Coutts, T. and Fitzgerald, M., Scientific American, pp. 9095 (September 1998).CrossRefGoogle Scholar
2. Charache, G., DePoy, D. and Baldasaro, P., Compound Semiconductor, Fall I, pp. 3640 (1998).Google Scholar
3. Hitchcock, C. W., Gutmann, R. J., Borrego, J. M., Bhat, I. B. and Charache, G. W., IEEE Transactions on Electron Devices, Volume 46, Number 10, pp. 21542161 (October 1999).CrossRefGoogle Scholar
4. Borrego, J.M., Wang, C. A., Dutta, P. S., Rajagopalan, G., Gutmann, R. J., Bhat, I. B., Ehsani, H., Beausang, J., Nichols, G., and Baldasaro, P. F., Proceedings of Thermophotovoltaic Generation of Electricity: 5th Conference, American Institute of Physics, Volume 653, pp. 498507 (2003).Google Scholar
5. Wang, C. A., Vineis, C. J., Choi, H. K., Connors, M. K., Huang, R. K., Danielson, L. R., Nichols, G., Charache, G. W., Donetsky, D., Anikeev, S. and Belenky, G., Proceedings of Thermophotovoltaic Generation of Electricity: 5th Conference, American Institute of Physics, Volume 653, pp. 324334 (2003).Google Scholar
6. Charache, G. W., Baldasaro, P. F., Danielson, L. R., DePoy, D.M., Freeman, M. J., Wang, C.A., Choi, H. K., Garbuzov, D. Z., Martinelli, R. U., Khaflin, V., Saroop, S., Borrego, J.M., and Gutmann, R. J., Journal of Applied Physics, Volume 85, Number 4, pp. 22472252 (1999).CrossRefGoogle Scholar
7. Flatté, M. E., Grein, C. H., Ehrenreich, H., Miles, R. H., and Cruz, H., Journal of Applied Physics, Volume 78, Number 7, pp. 45524559 (1995).CrossRefGoogle Scholar
8. Grein, C. H., Young, P. M., Flatté, M. E. and Ehrenreich, H., Journal of Applied Physics, Volume 78, Number 12, pp. 71437152 (1995).CrossRefGoogle Scholar
9. Saroop, S., Borrego, J. M., Gutmann, R. J., Charache, G. W., and Wang, C. A., Journal of Applied Physics, Volume 86, Number 3, pp. 15271534 (August 1999).CrossRefGoogle Scholar
10. Ahrenkiel, R. K., ‘Contactless measurement of recombination lifetime in photovoltaic materials’, 26th IEEE Photovoltaic Specialists Conference, Anaheim, CA (1997).Google Scholar
11. Clugston, D. A. and Basore, P. A., ‘PC 1D Version 5: 32-Bit Solar Cell Modeling on Personal Computers’, 26th IEEE Photovoltaic Specialists Conference, Anaheim, CA (1997).Google Scholar
12. Kumar, R. J., Gutmann, R.J., Borrego, J.M., Dutta, P. S., Wang, C.A., Martinelli, R.U. and Nichols, G., ‘Recombination Parameters for Antimonide-Based Semiconductors using RF Photoreflection Techniques’, submitted to Journal of Electronic Materials (2003).Google Scholar
13. Donetsky, D., Anikeev, S., Belenky, G., Luryi, S., Wangand, C. A. Nichols, G., Applied Physics Letters, Volume 81, Number 25, pp. 47694771 (2002)CrossRefGoogle Scholar

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Recombination Parameters in InGaAsSb Epitaxial Layers for Thermophotovoltaic Applications
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