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Recent Achievement in the GaN Epitaxy on Silicon and Engineering Substrates

Published online by Cambridge University Press:  01 February 2011

Wilk Arnaud ,
Melania Lijadi ,
Robert Langer ,
Philippe Bove ,
James Thorpe ,
Hervé Blanck ,
Virginie Hoel ,
Nicolas Defrance  and
Jean-Claude DeJaeger
Wilk Arnaud
Affiliation:
arnaud.wilk@picogiga.fr, PICOGIGA, R&D - Engineering, Villejust, France
Melania Lijadi
Affiliation:
PICOGIGA International Parc de Villejust – 91971 Courtaboeuf Cedex - France
Robert Langer
Affiliation:
PICOGIGA International Parc de Villejust – 91971 Courtaboeuf Cedex - France
Philippe Bove
Affiliation:
PICOGIGA International Parc de Villejust – 91971 Courtaboeuf Cedex - France
James Thorpe
Affiliation:
Technology Research and Development, United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, 89081 Ulm, Germany
Hervé Blanck
Affiliation:
Technology Research and Development, United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, 89081 Ulm, Germany
Virginie Hoel
Affiliation:
IEMN, institut délectronique, microélectronique et de nanotechnologies, Cité scientifique av Poincaré BP 60069, 59652 Villeneuve d'Ascq CedexFrance
Nicolas Defrance
Affiliation:
IEMN, institut délectronique, microélectronique et de nanotechnologies, Cité scientifique av Poincaré BP 60069, 59652 Villeneuve d'Ascq CedexFrance
Jean-Claude DeJaeger
Affiliation:
IEMN, institut d#x00E9;lectronique, microélectronique et de nanotechnologies, Cité scientifique av Poincaré BP 60069, 59652 Villeneuve d'Ascq CedexFrance
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Abstract

Since the middle of the 90's, GaN epitaxy techniques have been developed, using either MOCVD or MBE growth methods. A low cost approach is presented aiming at satisfying thermal issues encountered on conventional substrates such as SiC, Sapphire and more recently Silicon. Domain of application are being covered with their associated challenges: RF and High Power applications. Stress engineering is one of the key parameters.

Keywords

epitaxycrystal growthIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1108: Symposium A – Performance and Reliability of Semiconductor Devices , 2008 , 1108-A04-01
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

[1]. Langer, R. et al, GaAs MANTECH 2006, April 2006 VancouverGoogle Scholar
[2]. Bove, P., Lahreche, H., Da Cruz, D., Faure, B., Letertre, F., Boussagol, A., “Progress in Microwave GaN HEMTs on Silicon and Smart Cut™ engineered substrates for high power applications”, CSMAX 2004 Monterey USGoogle Scholar
[3]. Bove, P., Lahreche, H., Thuret, J., Letertre, F., Faure, B., “Manufacturing Engineered wafers for GaN RF power application”, GAASMANTECH 2005 Google Scholar
[4]. Cioccio, L.Di., Letertre, F., Le Tiec, Y., Papon, A.M., Jaussaud, C., Bruel, M., “Silicon Carbide on Insulator formation by Smart Cut process”, Mat. Sci. and Eng. B Vol. 46 (1997), p. 349 Google Scholar
[5]. Faure, B., Boussagol, A., Letertre, F., Lahreche, H., Bressot, S., Da Cruz, D., and Bove, P., “Recent progress on Engineered Substrates for GaN microelectronic applications”, 207th ECS meeting proceedings (2005)Google Scholar