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Realization of silicon nanopillar arrays with controllable sidewall profiles by holography lithography and a novel single-step deep reactive ion etching

Published online by Cambridge University Press:  01 February 2011

Yung-Jr Hung
Affiliation:
d9502307@mail.ntust.edu.tw, National Taiwan University of Science and Technology, Department of Electronic Engineering, Taipei, Taiwan, Province of China
San-Liang Lee
Affiliation:
sllee@mail.ntust.edu.tw, National Taiwan University of Science and Technology, Department of Electronic Engineering, Taipei, Taiwan, Province of China
Brian J. Thibeault
Affiliation:
thibeault@ece.ucsb.edu, University of California at Santa Barbara, Department of Electrical and Computer Engineering, Santa Barbara, United States
Larry A. Coldren
Affiliation:
coldren@ece.ucsb.edu, University of California at Santa Barbara, Department of Electrical and Computer Engineering, Santa Barbara, United States
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Abstract

A simple and efficient approach for fabricating silicon nanopillar arrays with a high aspect ratio and controllable sidewall profiles has been developed by using holographic lithography and a novel single-step deep reactive ion etching. During the etching process, scalloping of the sidewalls can be avoided while reserving the high mask selectivity and high etching rate. Besides, the sidewall angle of resultant patterns can be adjusted by tuning the composition of the gas mixture of single-step DRIE process. We further fabricate a tapered silicon nanopillar array and observe its photonic bandgap property. We believe that the good optical performance of this tapered silicon nanopillar array realized by the proposed approach shows the promising of this process for various applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

1 Murthy, B. R. J. Ng, K. K. Selamat, E. S. Balasubramanian, N. and Liu, W. T.Siliconnanopillar substrates for enhancing signal intensity in DNA microarrays,” Biosens.Bioelectron. 24, 723728 (2008).CrossRefGoogle ScholarPubMed
2 Talin, A. A. Hunter, L. L. Leonard, F. and Rokad, B.Large area, dense silicon nanowirearray chemical sensors,” Appl. Phys. Lett. 89, 153102 (2006).CrossRefGoogle Scholar
3 Qin, H. Kim, H.S. and Blick, R. H.Nanopillar arrays on semiconductor membranes aselectron emission amplifiers,” Nanotechnology 19, 095504 (2008).CrossRefGoogle ScholarPubMed
4 Poborchii, V. Tada, T. T. Kanayama and Moroz, A.Silver-coated silicon pillar photoniccrystals: enhancement of a photonic band gap,” Appl. Phys. Lett. 82, 508510 (2003).CrossRefGoogle Scholar
5 Tada, T. Poborchii, V. V. and Kanayama, T.Channel waveguides fabricated in 2D photoniccrystals of Si nanopillars,” Microelectr. Eng. 63, 259265 (2002).CrossRefGoogle Scholar
6 Goldberger, J. Hochbaum, A. I. Fan, R. and Yang, P.Silicon vertically integrated nanowirefield effect transistors,” Nano Lett. 6, 973977 (2006).CrossRefGoogle Scholar
7 Huang, M.J. Yang, C. R. Chiou, Y. C. and Lee, R. T.Fabrication of nanoporousantireflection surfaces on silicon,” Solar Energy Mater. & Solar Cells 92, 13521357 (2008).CrossRefGoogle Scholar
8 Lin, G. R. Chang, T. C. Liu, E. S. Kuo, H. C. and Lin, H. S.Low refractive index Sinanopillars on Si substrate,” Appl. Phys. Lett. 90, 181923 (2007).CrossRefGoogle Scholar
9 Tada, T. Poborchii, V. V. and Kanayama, T.Fabrication of photonic crystals consisting of Sinanopillars by plasma etching using self-formed masks,” J. J. Appl. Phys. 38, 72537256 (1999).CrossRefGoogle Scholar
10 Kuo, C.W. Shiu, J. Y. and Chen, P.Size and shape-controlled fabrication of large-areaperiodic nanopillar arrays,” Chem. Mater. 15, 29172920 (2003).CrossRefGoogle Scholar
11 Kuo, C.W. Shiu, J. Y. Chen, P. and Somorjai, G. A.Fabrication of size-tunable large-areaperiodic silicon nanopillar arrays with sub-10nm resolution,” J. Phys. Chem. B107, 99509953 (2003).CrossRefGoogle Scholar
12 Chang, Y.F. Chou, Q.R. Lin, J.Y. and Lee, C.H.Fabrication of high-aspect-ratio siliconnanopillar arrays with the conventional reactive ion etching technique,” Appl. Phys. A86, 193196 (2007).Google Scholar
13 Hsu, C. H. Lo, H. C. Chen, C. F. Wu, C. T. Hwang, J. S. Das, D. Tsai, J. Chen, L.C. and Chen, K.H.Generally applicable self-masked dry etching technique for nanotip arrayfabrication,” Nano Lett. 4, 471475 (2004).CrossRefGoogle Scholar
14 Bai, X. D. Xu, Z. Liu, S. Wang, E. G.Aligned 1D silicon nanostructure arrays by plasmaetching,” Sci. Technol. Adv. Mater. 6, 804808 (2005).CrossRefGoogle Scholar
15 Ayon, A. A. Braff, R. Lin, C. C. Sawin, H. H. and Schmidt, M. A.Characterization of a timemultiplexed inductively coupled plasma etcher,” J. Electrochem. Soc. 146, 339349 (1999).CrossRefGoogle Scholar
16 Wang, X. Zeng, W. Lu, G. Russo, O. L. and Eisenbraun, E.High aspect ratio Bosch etchingof sub-0.25 m trenches for hyperintegration applications,” J. Vac. Sci. Technol. B25, 13761381 (2007).CrossRefGoogle Scholar
17 Choi, C.H. and Kim, C.J.Fabrication of a dense array of tall nanostructures over a large sample area with sidewall profile and tip sharpness control,” Nanotechnology 17, 53265333 (2006).CrossRefGoogle Scholar
18 Morton, K. J, Nieberg, G. Bai, S. and Chou, S. Y, “Wafer-scale patterning of sub-40 nm diameter and high aspect ratio (50:1) silicon pillar arrays by nanoimprint and etching,” Nanotechnology 19, 345301 (2008).CrossRefGoogle ScholarPubMed
19 Hung, Y.J. Lee, S.L. and Pan, Y.T. “Holographic realization and bandgap tolerance evaluation of hexagonal two-dimensional photonic crystals,” Intl. Conf. Optics and Photonics Taiwan'08, paper Sat-S8-02, Taiwan (2008)Google Scholar
20 Hung, Y.J. Lee, S.L. and Pan, Y.T. “Holographic realization of two-dimensional photonic crystal structures on silicon substrates,” Integrated Photonics and Nanophotonics Research and Applications (IPNRA'09), paper IWD5, Honolulu, Hawaii, USA (2009).Google Scholar
21 Hung, Y.J. Lee, S.L. and Coldren, L. A.Deep and tapered silicon photonic crystals for achieving anti-reflection and enhanced absorption,” Optics Express 18, 6841 (2010).CrossRefGoogle ScholarPubMed

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Realization of silicon nanopillar arrays with controllable sidewall profiles by holography lithography and a novel single-step deep reactive ion etching
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