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Rapid Thermal Annealing and Oxidation of Silicon Wafers with Back-Side Films
Published online by Cambridge University Press: 10 February 2011
Abstract
Temperatures for lamp-heated rapid thermal processing of wafers with various back-side films were controlled by a Lucent Technologies pyrometer which uses a/c lamp ripple to compensate for emissivity. Process temperatures for anneals of arsenic and boron implants were inferred from post-anneal sheet resistance, and for rapid thermal oxidation, from oxide thickness. Results imply temperature control accuracy of 12°C to 17°C at 3 standard deviations.
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- Copyright © Materials Research Society 1997
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