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Rapid Epitaxial Growth of Si and SiGe Mono-Crystalline Films on Silicon-on-Glass Substrates by Reactive CVD Using SiH4, GeH4, and F2

Published online by Cambridge University Press:  18 May 2012

Hiroshi Noge
Affiliation:
Corning Holding Japan GK (CJGK), Akasaka Intercity 6F, 1-11-44 Akasaka, Minato-ku, Tokyo 107-0052, Japan National Institute of Advanced Industrial Science and Technology (AIST), Research Center for Photovoltaic Technologies, Central 2, 1-1-1 Umezono, Tsukuba-shi, Ibaraki-ken 305-8568, Japan
Akira Okada
Affiliation:
Corning Holding Japan GK (CJGK), Akasaka Intercity 6F, 1-11-44 Akasaka, Minato-ku, Tokyo 107-0052, Japan
Ta-Ko Chuang
Affiliation:
Corning® Incorporated, Corning, NY 14831, USA
J. Greg Couillard
Affiliation:
Corning® Incorporated, Corning, NY 14831, USA
Michio Kondo
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Research Center for Photovoltaic Technologies, Central 2, 1-1-1 Umezono, Tsukuba-shi, Ibaraki-ken 305-8568, Japan Tokyo Institute of Technology, Department of Innovative and Engineered Materials, 4259 Nagatsuta-cho, Midori-ku, Yokohama-shi, Kanagawa-ken 226-8502, Japan
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Abstract

We have succeeded in the rapid epitaxial growth of Si, Ge, and SiGe films on Si substrates below 670 ºC by reactive CVD utilizing the spontaneous exothermic reaction between SiH4, GeH4, and F2. Mono-crystalline SiGe epitaxial films with Ge composition ranging from 0.1 to 1.0 have been successfully grown by reactive CVD for the first time.

This technique has also been successfully applied to the growth of these films on silicon-on-glass substrates by a 20 - 50 ºC increase of the heating temperature. Over 10 μm thick epitaxial films at 3 nm/s growth rate are obtained. The etch pit density of the 5.2 μm-thick Si0.5Ge0.5 film is as low as 5 x 106 cm-2 on top. Mobilities of the undoped SiGe and Si films are 180 to 550 cm2/Vs, confirming the good crystallinity of the epitaxial films.

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Articles
Copyright
Copyright © Materials Research Society 2012

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References

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