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Raman Spectroscopy Investigation of (SiC)1-x (Ain)x, Layers Formed by Ion Implantation in 6H-SiC

Published online by Cambridge University Press:  15 February 2011

D. R. T. Zahn
Affiliation:
TU Chemnitz-Zwickau, Professur fur Halbleiterphysik, D-09107 Chemnitz, Germany, werni@physikus.physik.tu-chemnitz.de
T. Werninghaus
Affiliation:
TU Chemnitz-Zwickau, Professur fur Halbleiterphysik, D-09107 Chemnitz, Germany, werni@physikus.physik.tu-chemnitz.de
M. Thümer
Affiliation:
TU Chemnitz-Zwickau, Professur fur Halbleiterphysik, D-09107 Chemnitz, Germany, werni@physikus.physik.tu-chemnitz.de
J. Pezoldt
Affiliation:
TU Ilmenau, Institut fur Festkörperelektronik, D-98684 Ilmenau, Germany
V. Heera
Affiliation:
FRZ Rossendorf e.V., Institut fur lonenstrahlphysik und Materialforschung, D-0 1314 Dresden, Germany
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Abstract

6H silicon carbide (SiC) substrates were implanted with nitrogen and aluminum at different doses and annealed in the temperature range from 1300°C-1700°C. Micro-Raman Spectroscopy (μ-RS) measurements were performed in two sample geometries (conventional plane-view and cross-sectional). Changes of the polytype from 6H- to a cubic (SiC)1-xAIN)x, and influences in the 6H-SiC wafer up to depths of 2μm were detected. The results obtained by crosssectional μ-RS are discussed in comparison to other results from Reflection High Electron Energy Diffraction (RHEED), Rutherford Backscattering (RBS), Auger Electron Spectroscopy (AES), Transmission Electron Microscopy (TEM), and Positron Annihilation Spectroscopy (PAS) measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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Raman Spectroscopy Investigation of (SiC)1-x (Ain)x, Layers Formed by Ion Implantation in 6H-SiC
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Raman Spectroscopy Investigation of (SiC)1-x (Ain)x, Layers Formed by Ion Implantation in 6H-SiC
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