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Radiative and Non-Radiative Recombinations at Er Centers in GaAlAs

Published online by Cambridge University Press:  25 February 2011

Taha Benyattou
INSA de Lyon, LPM, Bat 502, 69621 Villeurbanne cedex, France .
Djelloul Seghier
INSA de Lyon, LPM, Bat 502, 69621 Villeurbanne cedex, France .
Gerard Guillot
INSA de Lyon, LPM, Bat 502, 69621 Villeurbanne cedex, France .
Richard Moncorge
UCB, Bat 205, Laboratoire de Physico-Chimie des Matériaux Luminescents, 69622 Villeurbanne cedex, France
Pierre Galtier
Thomson CSF/LCR, 91404 Orsay cedex, France .
Marie-Noelle Charasse
Thomson CSF/LCR, 91404 Orsay cedex, France .
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Photoluminescence (PL) of Molecular Beam Epitaxy grown Er doped Ga 0.55Al0.45As has been studied under continuous and pulsed laser excitation . The observed PL lines are attributed to transitions from the first excited stated 4I13/2 to the ground state 4I15/2 . The life time of the 4I13/2 level is found to be 1 ms at 10K, which is comparable to the decay time observed in insulators.

Using two-beam experiments we show that there are losses (Auger effect) that occur during the PL excitation.We propose the following model for the Er PL excitation process: excitons bound to Er are created and decay non radiatively by energy transfer to the rare earth (which is the cause of the Er related PL) or to free carriers by Auger effect (which is the cause of the observed losses).

Research Article
Copyright © Materials Research Society 1990

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