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Quantitative Analysis of Raman Spectra in Si/SiGe Nanostructures

Published online by Cambridge University Press:  28 February 2013

Selina Mala
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102, U.S.A.
Leonid Tsybeskov
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102, U.S.A.
Jean-Marc Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada.
Xiaohua Wu
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada.
David J. Lockwood
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada.
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Abstract

We present comprehensive quantitative analysis of Raman spectra in two-(Si/SiGe superlattices) and three-(Si/SiGe cluster multilayers) dimensional nanostructures. We find that the Raman spectra baseline is due to the sample surface imperfection and instrumental response associated with the stray light. The Raman signal intensity is analyzed, and Ge composition is calculated and compared with the experimental data. The local sample temperature and thermal conductivity are calculated, and the spectrum of longitudinal acoustic phonons is explained.

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Copyright © Materials Research Society 2013

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Quantitative Analysis of Raman Spectra in Si/SiGe Nanostructures
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