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Quantification of Oxidizer Systems for Porous Silicon Combustion

Published online by Cambridge University Press:  09 February 2015

Ani Abraham
Affiliation:
U.S. Army Research Laboratory, Adelphi, Maryland, 20783, USA New Jersey Institute of Technology (NJIT), University Heights, Newark, NJ 07102, USA
Nicholas W. Piekiel
Affiliation:
U.S. Army Research Laboratory, Adelphi, Maryland, 20783, USA
Cory R. Knick
Affiliation:
U.S. Army Research Laboratory, Adelphi, Maryland, 20783, USA
Christopher J. Morris
Affiliation:
U.S. Army Research Laboratory, Adelphi, Maryland, 20783, USA
Edward Dreizin
Affiliation:
New Jersey Institute of Technology (NJIT), University Heights, Newark, NJ 07102, USA
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Abstract

We present the first quantitative assessment of combustion dynamics of on-chip porous silicon (PS) energetic material using sulfur and nitrate-based oxidizers with potential for improved moisture stability and/or minimized environmental impact compared to sodium perchlorate (NaClO4). Material properties of the PS films were characterized using gas adsorption porosimetry, and profilometry to calculate specific surface area, porosity and etch depth. The PS/sulfur energetic composite was formed using three pore loading techniques, where the combustion speeds ranged from 2.9 – 290 m/s. The nitrate-based oxidizers were solution-deposited using different compatible solvents, and depending on the metal-nitrate yielded combustion speeds of 3.1 – 21 m/s. Additionally, the combustion enthalpies from bomb calorimetry experiments are reported for the alternative PS/oxidizer systems in both nitrogen and oxygen environments.

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Articles
Copyright
Copyright © Materials Research Society 2015 

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