Skip to main content Accessibility help
×
Home
Hostname: page-component-55b6f6c457-4lvx9 Total loading time: 0.176 Render date: 2021-09-28T14:43:34.663Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Pyroelectric Properties of Ferroelectric Thin Films: Effect of Internal Stresses

Published online by Cambridge University Press:  01 February 2011

A. Sharma
Affiliation:
Department of Metallurgy and Materials Engineering and Institute of Materials Science, University of Connecticut, Storrs, CT 06269
Z.–G. Ban
Affiliation:
Department of Metallurgy and Materials Engineering and Institute of Materials Science, University of Connecticut, Storrs, CT 06269
S. P. Alpay
Affiliation:
Department of Metallurgy and Materials Engineering and Institute of Materials Science, University of Connecticut, Storrs, CT 06269
Get access

Abstract

A thermodynamic model is employed to analyze the effect of internal stresses on the pyroelectric response of ferroelectric thin films. The pyroelectric coefficient as a function of the misfit strain is calculated for (001) Ba0.6Sr0.4TiO3 epitaxial thin films by taking into account formation of misfit dislocations that relieve epitaxial stresses during deposition. It is shown that the pyroelectric response is highly dependent on the misfit strain in epitaxial thin films. Enhanced pyroelectric coefficient can be achieved by adjusting the misfit strain via substrate selection and film thickness especially in the vicinity of the ferroelectric to paraelectric phase transformation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Whatmore, R.W., Zhang, Q., Huang, Z. and Dorey, R.A., Materials Science in Semiconductor Processing 5, 65 (2003).CrossRefGoogle Scholar
2. Kulwicki, B.M., Amin, A., Beratan, H.R. and Hanson, C.M., IEEE Proceedings on Application of Ferroelectrics 8, (1992).Google Scholar
3. Shaw, T.M., Suo, Z., Huang, M., Liniger, E., Laibowitz, R.B. and Baniecki, J.D., Appl. Phys. Lett. 75, 2129 (1999).CrossRefGoogle Scholar
4. Li, H., Roytburd, A.L., Alpay, S.P., Tran, T.D., Salamanca-Riba, L. and Ramesh, R., Appl. Phys. Lett. 78, 2354 (2001).CrossRefGoogle Scholar
5. Pertsev, N.A., Zembilgotov, A.G. and Tagantsev, A.K., Phys. Rev. Lett. 80, 1988 (1998).CrossRefGoogle Scholar
6. The parameters used for the calculation of Figures 1 and 2 (in SI units, T in oC): a 1* =4.63×105(T-5)-1.90×1010 u m , a 3* =4.63×105(T-5)+1.96×1010 u m , a 1*1 =2.16T×106 +1.44×109, a 3*3 =2.16T×106 +7.95×108, a 1*2 =1.73×108 a 1*3 =1.51×108; data compiled from Ref. [7].Google Scholar
7. Ban, Z.-G. and Alpay, S.P., J. Appl. Phys. 91, 9288 (2002).CrossRefGoogle Scholar
8. Amin, A., J. of Electroceramics 8, 99 (2002).CrossRefGoogle Scholar
9. Ban, Z.-G. and Alpay, S.P., Appl. Phys. Lett. 82, 3499 (2003).CrossRefGoogle Scholar
10. Matthews, J.W. and Blakeslee, A.E., J. Cryst. Growth 27, 118 (1974).Google Scholar
11. Iijima, K., Tomita, Y., Takayama, R. and Ueda, I., J. Appl. Phys. 60, 361367 (1986).Google Scholar
12. Muralt, P., Rep. Prog. Phys. 64, 1339 (2001).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Pyroelectric Properties of Ferroelectric Thin Films: Effect of Internal Stresses
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Pyroelectric Properties of Ferroelectric Thin Films: Effect of Internal Stresses
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Pyroelectric Properties of Ferroelectric Thin Films: Effect of Internal Stresses
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *