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Pulsed Proton Beam Annealing of Co-Si Thin Film Systems
Published online by Cambridge University Press: 15 February 2011
Abstract
Cobalt (∼300Å) and CoSi2 (∼1000Å) thin films on Si have been annealed by intense proton beams. RBS and TEM were performed to study ion beam annealing effects.
For ion beam energy densities above about 1 J/cm2, epitaxial CoSi2 layers were formed for both Co and polycrystalline CoSi2 on Si. At low energy densities, Co2Si was found to coexist with Co. The results are discussed in terms of eutectic melting processes.
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- Copyright © Materials Research Society 1983
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